LED1550-03 v 1.2 01.04.2014 Description LED1550-03 is a InGaAsP based Light Emitting Diode emitting at 1550 nm with rated output power of 2.5 mW, mounted on a lead frame with a 5 mm clear epoxy resin Maximum Ratings Parameter Symbol Values Unit Power Dissipation (TA=25°C) PD Max. 120 Forward Current (TA=25°C) IF 100 mA Pulse Forward Current (TA=25°C)* IFP 1000 mA Reverse Voltage (TA=25°C, IR=10µ ) VR 5 V Min. mW Operating Temperature TCASE - 30 + 85 °C Storage Temperature TSTG - 40 + 100 °C 265 °C TSOLDER Soldering Temperature* * must be completed within 3 seconds at 265°C Electro-Optical Characteristics (T Parameter Symbol Peak Wavelength λP Spectral Width (FWHM) ∆λ Radiated Power PO Radiated Intensity CASE = Min. 1500 25°C, IF = 50 mA) Values Typ. 1550 Max. 1600 Unit nm 100 nm 2.5 mW IE 18 mW/sr Forward Voltage VF 0.9 Forward Current IF 50 Reverse Current IR 1.3 1.5 V mA 10 µA Viewing Half Angle Ө1/2 ±15 deg. Rise/Fall time tR,tF 10/10 ns www.roithner-laser.com 1 Performance Characteristics Forward Current vs. Forward Voltage Relative Intensity vs. Pulsed Forward Current Forward Voltage vs. Ambient Temp. Forward Current vs. Pulse Duration www.roithner-laser.com 2 Performance Characteristics Relative Intensity vs. Wavelength Peak Wavelength vs. Ambient Temp. l www.roithner-laser.com 3 Soldering • Soldering must be completed within 3 seconds at a maximum temperature of 265°C Drawing All dimensions in mm © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com 4