Si – photodiode with integrated transimpedance amplifier IQ 800 L IQ 801 L IQ 802 L characteristics: • • • • • • • • • • • SI-photodiode with integrated low noise JFET-amplifier integrated feedback resistor and capacitor decadic staggered responsivity spectral range VIS and NIR very low offset- and driftparameters high dynamic range duale power supply hermetically sealed TO-5 package assembly isolated to ground collimator lense components are in conformity with ROHS and WEEE applications: • • • • common light-/radiation measuring applications detevtor for measuring of low radiation intensities with high signal to noise level spectroscopy medical diagnostics maximum ratings: • • • • operating voltage operating temperature range storage temperature range welding temperature (3s) ±18 V -25°C … +85°C -40°C … +100°C 260°C technical data: common test conditions, as not otherwise specified: TA = 25°C, VS = ±15V typ. Data, maximum data in brackets parameter active area feedback resistor dark offset voltage noise voltage spectral range max. of spectral responsivity max. spectral responsitiy rise time bandwidth opening angle saturation voltage short current operation voltage current consumption realtive spectral responsivity testcondition E = 0 lx B = 20 kHz S = 0,1*Smax S = Smax S = Smax -3 dB S(φ)=0,5* Smax*cos(φ) RL = 2 kΩ IQ802L IQ801L 4,8 1 10 ± 0,5 ± 0,5 0,2 0,3 400 … 1100 850 0,6 6 3 15 120 25 IQ800L 100 ±2 0,5 60 35 10 unit mm² MΩ mV mVrms nm nm mV/nW µs kHZ ± 50 Grad -14,8 (-14,5) ± 45 ± 5 … ± 15 2,2 (2,6) V mA V mA internal circuit 1 2 3 4 5 package dimensions GND Out +VS –VS Case (bottom view)