SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coefficient of signal (responsivity) is also low, <-0.1%/K. Because of the low noise (dark current, in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see circuit on following page). SiC photodiodes are available as unfiltered broadband devices or with optical filters providing UV-A, UV-B, or UV-C-only sensitivity, or erythemal action curve compliance. Maximum Ratings (T = 25°C) Parameter Values Symbol Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature (max. 3s) Min. +20 -55 -55 UR Topr Tstg Tsol Max. +170 +170 +260 Unit V °C °C °C General Characteristics (T = 25°C) Parameter Sensitive Area Dark current (1V reverse bias) Capacitance Short circuit (10mW/cm² at peak) Temperature coefficient Symbol Min.* A Id C ID TC Values Typ.* 11 0.07 Max.* 50 1660 -0.1 Unit mm² fA pF nA %/K Spectral Characteristics (T = 25°C) Parameter Max. spectral responsivity Wavelength of max. spectral resp. Responsivity range (S=0.1*Smax) Visible blindness (Smax / S>405nm) www.roithner-laser.com Symbol Smax λmax VB Min.* 0.085 Values Typ.* Max.* 0.130 280 220 360 10 10 Unit -1 AW nm nm - 1 Performance Characteristics Normalized Spectral Responsivity [a.u.] Viewing Angle Measurement Setup lamp aperture diameter: 10 mm distance lamp aperture to second aperture: 17 mm second aperture diameter: 10 mm distance second aperture to detector: 93 mm pivot level = top surface of the photodiode window Product Portfolio We offer the following selection of UV Photodiodes: Option UV sensitivity Detector area SIC01S-18 SIC01S-C18 SIC01S-C5 SIC01S-18ISO90 SIC01M-18 SIC01M-5Lens SIC01M-C5 SIC01L-18 SIC01L-5 SIC01L-C5 SIC01XL-5 UV broadband UVC UVC UV broadband UV broadband UV broadband UVC UV broadband UV broadband UVC UV broadband 0.06 mm2 0.06 mm2 0.06 mm2 0.06 mm2 0.2 mm2 0.2 mm2 0.2 mm2 1.0 mm2 1.0 mm2 1.0 mm2 4.0 mm2 Max. spectral responsivity min. max. 0.085 AW-1 0.13 AW-1 -1 0.066 AW 0.10 AW-1 0.066 AW-1 0.10 AW-1 0.085 AW-1 0.13 AW-1 -1 0.085 AW 0.13 AW-1 0.085 AW-1 0.13 AW-1 -1 0.066 AW 0.10 AW-1 0.085 AW-1 0.13 AW-1 -1 0.085 AW 0.13 AW-1 0.066 AW-1 0.10 AW-1 0.085 AW-1 0.13 AW-1 Amplified photodiodes (TIAMO series) are also available. www.roithner-laser.com 2 Outline Dimensions All dimensions in mm Circuit Application Note For correct reading of the photodiode the current (and NOT the voltage) must be analyzed. This requires a short circuiting of the photodiode. Usual approaches are using a Picoamperemeter or a transimpedance amplifier circuit as shown above. To make the photodiode running reliably, particularly in harsh environment, EMC compatibility and protection against dust, water, and mechanical influences is required. Below listed modules base on a SiC photodiode and guarantee this protection and safety. UVTIAMO: SiC photodiodes with integrated amplifier (0-5V output), available for power intensities ranging from 1.8 pW/cm² to 18 W/cm² for UV broadband, UVA, UVB, UVC or Erythema (UV-Index) measurements. No additional amplifier needed, direct connection to voltmeter, controller, etc. UV-probe: SiC based sensor modules in customizable industry grade housings (e.g. cosine response, water pressure proof, sapphire windows) and different electronic output configurations (voltage, current, USB, Can, LAN) to choose from. Ask us for further details! © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice. www.roithner-laser.com 3