UVC-selective SiC based UV sensor SIC01S-C Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294 • TO-39 metal package with 0.054 mm2 active chip area • The chip is made by Cree Research Inc., U.S.A. • Radiation-hard UVC interference filter is made in Germany Eigenschaften • UVC Photodiode mit kleiner photoaktiver Fläche • Optimale Eignung für Messung starker UVC-Strahlung • Siliziumcarbid-Chip garantiert extreme Strahlungsfestigkeit • Spektrale Empfindlichkeit in Übereinstimmung mit DVGW W 294 • TO-39 Metallgehäuse mit 0,054 mm2 aktiver Chipfläche • Chiphersteller: Cree Research Inc., U.S.A. • Der strahlungsharte Interferenzfilter wird in Deutschland hergestellt Rev. 1.1 Page 1 [4] UVC-selective SiC based UV sensor SIC01S-C Maximum Ratings Parameter Symbol Value Unit Topt -25 ... +80 °C VRmax 20 V Symbol Value Unit Filter aperture D 3.6 mm Active area A 0.054 mm Dark current at 1 V reverse bias Id 1 fA Capacitance C 21 pF Short circuit current for 2 10 mW/cm @ 254 nm I0 ca. 350 nA Symbol Value Unit Max. spectral sensitivity Smax 0.11 AW Wavelength of max. spectral sensitivity λSmax 270 nm - 230 - 285 nm Operating temperature range Reverse voltage General Characteristics (Ta = 25 °C) Parameter 2 Spectral Characteristics (Ta = 25 °C) Parameter Range of spectral sensitivity (S=0.1*Smax) -1 Linear Spectral Response Rev. 1.1 Page 2 [4] UVC-selective SiC based UV sensor SIC01S-C Logarithmic Spectral Response Rev. 1.1 Page 3 [4] UVC-selective SiC based UV sensor SIC01S-C Application Example Pin Layout Rev. 1.1 Page 4 [4]