UVC-selective SiC based UV sensor SIC01S-C

UVC-selective SiC based UV sensor
SIC01S-C
Features
•
UVC Photodiode with small photoactive area
•
Optimally suited for detection and control of strong UVC radiation
•
Silicon Carbide based chip for extreme irradiation hardness
•
Spectral Response in accordance with DVGW W 294
•
TO-39 metal package with 0.054 mm2 active chip area
•
The chip is made by Cree Research Inc., U.S.A.
•
Radiation-hard UVC interference filter is made in Germany
Eigenschaften
•
UVC Photodiode mit kleiner photoaktiver Fläche
•
Optimale Eignung für Messung starker UVC-Strahlung
•
Siliziumcarbid-Chip garantiert extreme Strahlungsfestigkeit
•
Spektrale Empfindlichkeit in Übereinstimmung mit DVGW W 294
•
TO-39 Metallgehäuse mit 0,054 mm2 aktiver Chipfläche
•
Chiphersteller: Cree Research Inc., U.S.A.
•
Der strahlungsharte Interferenzfilter wird in Deutschland hergestellt
Rev. 1.1
Page 1 [4]
UVC-selective SiC based UV sensor
SIC01S-C
Maximum Ratings
Parameter
Symbol
Value
Unit
Topt
-25 ... +80
°C
VRmax
20
V
Symbol
Value
Unit
Filter aperture
D
3.6
mm
Active area
A
0.054
mm
Dark current at
1 V reverse bias
Id
1
fA
Capacitance
C
21
pF
Short circuit current for
2
10 mW/cm @ 254 nm
I0
ca. 350
nA
Symbol
Value
Unit
Max. spectral sensitivity
Smax
0.11
AW
Wavelength of max. spectral sensitivity
λSmax
270
nm
-
230 - 285
nm
Operating temperature range
Reverse voltage
General Characteristics
(Ta = 25 °C)
Parameter
2
Spectral Characteristics
(Ta = 25 °C)
Parameter
Range of spectral sensitivity
(S=0.1*Smax)
-1
Linear Spectral Response
Rev. 1.1
Page 2 [4]
UVC-selective SiC based UV sensor
SIC01S-C
Logarithmic Spectral Response
Rev. 1.1
Page 3 [4]
UVC-selective SiC based UV sensor
SIC01S-C
Application Example
Pin Layout
Rev. 1.1
Page 4 [4]