Ultraviolet selective SiC based UV sensor SIC01L-5

Ultraviolet selective SiC based UV sensor
SIC01L-5
Features
•
Broad band UVA-UVB-UVC photodiode in TO5 metal package
•
Silicon Carbide based chip for extreme radiation hardness
•
Chip dimensions of 1 × 1 mm2 with 0.96 mm2 active area
•
Intrinsic visible blindness due to wide-bandgap semiconductor material
•
Completely insensitive to the visible (S280nm / S400nm > 104) without filters
•
The chip is manufactured by Cree Research Inc., U.S.A.
Eigenschaften
•
Breitband UVA-UVB-UVC Photodiode im TO5 Metallgehäuse
•
Siliziumkarbidchip garantiert extreme Strahlungsfestigkeit
•
Chipabmessungen von 0.5 × 0.5 mm2 mit 0.22 mm2 aktiver Fläche
•
hohe intrinsische Unempfindlichkeit gegenüber dem sichtbaren Licht durch
Halbleitermaterial mit hoher Bandlücke
•
Vollständig unempfindlich für sichtbares Licht (S280nm / S400nm > 104) ohne
Filtereinsatz
•
Rev. 1.4
Chiphersteller: Cree Research Inc., U.S.A.
Page 1 [4]
Ultraviolet selective SiC based UV sensor
SIC01L-5
Maximum Ratings
Parameter
Symbol
Value
Unit
Topt
-25 ... +70
°C
VRmax
20
V
Symbol
Value
Unit
Active area
A
0.96
mm2
Dark current at
1 V reverse bias
Id
5
fA
Capacitance
C
200
pF
Short circuit current
at bright sun
I0
ca. 800
nA
Symbol
Value
Unit
Max. spectral sensitivity
Smax
0.13
A W -1
Wavelength of max. spectral sensitivity
λSmax
280
nm
-
220 - 360
nm
Operating temperature range
Reverse voltage
General Characteristics
(Ta = 25 °C)
Parameter
Spectral Characteristics
(Ta = 25 °C)
Parameter
Range of spectral sensitivity
(S=0.1*Smax)
Rev. 1.4
Page 2 [4]
Ultraviolet selective SiC based UV sensor
SIC01L-5
Logarithmic Spectral Response
Rev. 1.4
Page 3 [4]
Ultraviolet selective SiC based UV sensor
SIC01L-5
Application Example
Pin Layout
Rev. 1.4
Page 4 [4]