Ultraviolet selective SiC based UV sensor SIC01S

Ultraviolet selective SiC based UV sensor
SIC01S
Features
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Silicon Carbide based chip for extreme irradiation hardness
Intrinsic visible blindness due to wide-bandgap semiconductor material
TO-18 metal package with 0,054 mm2 active chip area
other TO-type metal package on request
other (larger) active chip areas on request
sensors with UVA, UVB or UVC filter on request
Material Source
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The chip is manufactured in U.S.A.
The direct material for housing is manufactured by Schott, Germany.
Quality control is done in Germany.
Maximum Ratings
Parameter
Operating temperature range
Reverse voltage
Rev. 1.4
Symbol
Value
Unit
Topt
-25 ... +70
°C
VRmax
20
V
Page 1 [4]
Ultraviolet selective SiC based UV sensor
SIC01S
General Characteristics
(Ta = 25 °C)
Parameter
Symbol
Value
Unit
Active area
A
0,054
mm2
Dark current at
1 V reverse bias
Id
1
fA
Capacitance
C
21
pF
Short circuit current
at bright sun
I0
ca. 50
nA
Symbol
Value
Unit
Max. spectral sensitivity
Smax
0,13
A W -1
Wavelength of max. spectral sensitivity
λSmax
285
nm
-
210 - 380
nm
Spectral Characteristics
(Ta = 25 °C)
Parameter
Range of spectral sensitivity
(S=0.1*Smax)
Rev. 1.4
Page 2 [4]
Ultraviolet selective SiC based UV sensor
SIC01S
Linear Spectral Response
Logarithmic Spectral Response
Rev. 1.4
Page 3 [4]
Ultraviolet selective SiC based UV sensor
SIC01S
Application Example
Pin Layout
Rev. 1.4
Page 4 [4]