v 1.0 12.06.2013 ELC-800-25 Description ELC-800-25 is a GaAlAs based 325x325 µm bare LED chip die. It is of double hetero structure in dual combination (DDH), and has a typical emission wavelength of 800 nm. It is delivered on adhesive film with the wire bond side up Characteristics (I =20mA, T F Parameter AMB=25°C) Symbol Emission Wavelength λpeak Forward Voltage VF Reverse Current (VR=5V) IR Output Power PO Spectral bandwidth (FWHM) Rise/Fall time Min. 795 2.5 Values Typ. 800 Max. 805 1.60 1.9 V 100 µA Unit nm 3.2 mW λ∆ 27 nm tR/tF 45/30 ns Drawing & Dimensions All dimensions in µm © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com 1