RU80N15Q N-Channel Advanced Power MOSFET Features Pin Description · 150V/80A RDS (ON)=31mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 150 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① TC=25°C 80 TC=25°C 300 TC=25°C TC=100°C 80 60 TC=25°C 180 TC=100°C 90 V A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case ② ① A W 0.83 °C/W 169 mJ Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 www.ruichips.com RU80N15Q Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU80N15Q Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 150 V VDS= 150V, VGS=0V 1 TJ=85°C VGS(th) IGSS RDS(ON) VGS=0V, IDS=250µA ④ Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A µA 30 2 3 31 4 V ±100 nA 36 mΩ 1.2 V Diode Characteristics ④ VSD trr Diode Forward Voltage ISD=40 A, VGS=0V Reverse Recovery Time 68 ns 130 nC 1.0 Ω ISD=40A, dlSD/dt=100A/µs qrr Reverse Recovery Charge Dynamic Characteristics ⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz 3800 550 pF 250 18 VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=10Ω Turn-off Fall Time Gate Charge Characteristics 32 ns 80 56 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VGS=0V, VDS= 30V, Frequency=1.0MHz 90 VDS=30V, VGS= 10V, IDS=40A 25 nC 30 ①Calculated continuous current based on maximum allowable junction temperature. ②Pulse width limited by safe operating area. ③Limited by TJmax, IAS =26A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 2 www.ruichips.com RU80N15Q Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU80N15Q Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) VDS - Drain-Source Voltage (V) VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU80N15Q Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU80N15Q Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 6 www.ruichips.com RU80N15Q Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU80N15Q RU80N15Q TO-247 Tube 30 - - Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 7 www.ruichips.com RU80N15Q Package Information TO-247 SYMBOL MM MM INCH SYMBOL MAX MIN MAX A 4.850 5.150 0,191 0.200 A1 2.200 2.600 0.087 0.102 L 40.900 41.300 1.610 1.626 B 1.000 1.400 0.039 0.055 L1 24.800 25.100 0.976 0.988 E2 MIN INCH MIN MAX 3.600 REF MIN MAX 0.142 REF b1 2.800 3.200 0.110 0.126 L2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 Φ 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 TYP 0.215 TYP c1 1.900 2.100 0.075 0.083 H 5.980 REF. 0.235 REF. D 15.450 15.750 0.608 0.620 h E1 3.500 REF. 0.000 0.300 0.000 0.012 0.138 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 8 www.ruichips.com RU80N15Q Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. E – NOV., 2012 9 www.ruichips.com