DTC115T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC 100mA R1 100kΩ VMT3 EMT3 50V DTC115TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA115T series 6) Lead Free/RoHS Compliant. UMT3 SMT3 DTC115TUA SOT-323(SC-70) l Inner circuit B: BASE C: COLLECTOR E: EMITTER Driver circuit l Packaging specifications DTC115TM DTC115TE DTC115TUA DTC115TKA DTC115TKA SOT-346(SC-59) l Application Switching circuit, Inverter circuit, Interface circuit, Part No. DTC115TE SOT-416(SC-75A) Package Package size Taping code VMT3 EMT3 UMT3 SMT3 1212 1616 2021 2928 T2L TL T106 T146 Reel size Tape width (mm) (mm) 180 180 180 180 8 8 8 8 Basic ordering unit.(pcs) Marking 8000 3000 3000 3000 09 09 09 09 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/7 20121023 - Rev.001 DTC115T series Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Collector current DTC115TM Power dissipation 150 DTC115TE 150 PD*1 DTC115TUA mW 200 DTC115TKA 200 Junction temperature Range of storage temperature Tj 150 ℃ Tstg -55 to +150 ℃ l Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50μA 50 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V Emitter-base breakdown voltage BVEBO IE = 50μA 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 μA Emitter cut-off current IEBO VEB = 4V - - 0.5 μA VCE(sat) IC / IB = 1mA / 0.1mA - - 0.3 V DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 - Input resistance R1 70 100 130 kΩ Transition frequency f T*2 - 250 - MHz Collector-emitter saturation voltage VCE = 10V, IE = -5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121023 - Rev.001 DTC115T series Datasheet l Electrical characteristic curves(Ta=25℃ ) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs. Collector Current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/7 20121023 - Rev.001 DTC115T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/7 20121023 - Rev.001 DTC115T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/7 20121023 - Rev.001 DTC115T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/7 20121023 - Rev.001 DTC115T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/7 20121023 - Rev.001