DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA Transistors Digital transistors (built in resistor) DTA124TH / DTA124TE / DT124TUA / DTA124TKA / DTA124TSA !External dimensions (Units : mm) DTA124TH 1.6 0to0.1 0.7 0.12 1.0 (2) (3) 1.6 (1) 0.5 0.5 0.27 0.85 (1) Emitter (2) Base (3) Collector ROHM : EMT3H 0.2 1.6 (2) (3) 1.0 (1) 0.50.5 DTA124TE 0.2 Addreviated symbol : 95 0.3 !Features 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. 0.8 0.7 0to0.1 !Equivalent circuit 0.55 0.15 1.6 0.1Min. ROHM : EMT3 Addreviated symbol : 95 2.0 1.3 0.3 (3) (2) All terminals have same dimensions E 0.65 0.65 (1) R1 0.9 DTA124TUA B 0.7 C (1) Emitter (2) Base (3) Collector 1.25 B : Base C : Collector E : Emitter 0.1to0.4 ROHM : UMT3 EIAJ : SC-70 0to0.1 0.15 0.2 2.1 (1) Emitter (2) Base (3) Collector Addreviated symbol : 95 (2) (3) 0.4 All terminals have same dimensions 0.95 0.95 1.9 2.9 (1) DTA124TKA 1.6 1.1 (1) Emitter (2) Base (3) Collector 0to0.1 ROHM : SMT3 EIAJ : SC-59 0.8 0.15 2.8 0.3to0.6 Addreviated symbol : 95 DTA124TSA 2 (15Min.) 3Min. 3 4 0.45 2.5 5 ROHM : SPT EIAJ : SC-72 (1) (2) (3) 0.5 0.45 (1) Emitter (2) Collector (3) Base DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Limits(DTA124T ) Symbol H E UA Unit KA SA Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC Junction temperature Tj 150 ˚C Storage temperature Tstg −55~+150 ˚C 150 200 300 mW !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −50 - - V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 - - V IC=−1mA Emitter-base breakdown voltage BVEBO −5 - - V IE=−50µA ICBO - - −0.5 µA VCB=−50V VEB=−4V Collector cutoff current Conditions IEBO - - −0.5 µA VCE(sat) - - −0.3 V IC/IB=−5mA/−0.5mA DC current transfer ratio hFE 100 250 600 - VCE=−5V, IC=−1mA Input resistance R1 15.4 22 28.6 kΩ - Transition frequency fT - 250 - MHz VCE=−10V, IE=5mA, f=100MHz ∗ Emitter cutoff current Collector-emitter saturation voltage ∗ Transition frequency of the device !Packaging specifications Part No. Package EMT3H EMT3 UMT3 SMT3 SPT Package type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 - - - - - - - - - DTA124TH DTA124TE - DTA124TUA - - DTA124TKA - - - DTA124TSA - - - - 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100˚C 25˚C −40˚C 20 10 5 2 1 -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m COLLECTOR URRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves -1 IC/IB=10 -500m -200m -100m -50m -20m -10m Ta=100˚C 25˚C −40˚C -5m -2m -1m -10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current