DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA Transistors Digital transistors (built-in resistor) DTC144TM / DTC144TE / DTC144TUA / DTC144TKA / DTC144TSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !Equivalent circuit C B R1 E B : Base C : Collector E : Emitter !Structure NPN digital transistor (Built-in resistor type) !External dimensions (Units : mm) DTC144TM DTC144TE (1) (2) ROHM : VMT3 0.15Max. (3) DTC144TKA (1) Emitter (2) Base (3) Collector Abbreviated symbol : 96 2±0.2 (15Min.) 3Min. 3±0.2 4±0.2 5 0~0.1 0.15 0.45+ −0.05 0.4 2.5 + −0.1 (1) (2) (3) 0.5 0.15 0.45 + −0.05 (1) Emitter (2) Collector (3) Base 0.4 +0.1 −0.05 ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 − 0.06 0.3Min. 0.1Min. 0.15±0.05 All terminals have same dimensions DTC144TSA ROHM : SPT EIAJ : SC-72 0~0.1 (3) 0.3+0.1 −0 ROHM : UMT3 EIAJ : SC-70 0.8±0.1 (2) 0.2 1.6+ −0.1 2.1±0.1 (1) (3) (1) Emitter (2) Base (3) Collector 1.1+0.2 −0.1 0.95 0.95 0.7±0.1 (2) 1.25±0.1 (1) 2.9±0.2 1.9±0.2 0.9±0.1 0.2 0.15±0.05 Abbreviated symbol : 96 2.0±0.2 1.3±0.1 0.65 0.65 0~0.1 +0.1 0.3 −0.05 ROHM : EMT3 Abbreviated symbol : 96 DTC144TUA 0.55±0.1 2.8±0.2 0.13 0~0.1 0.5 0.22 (1) (1) Base (2) Emitter (3) Collector 0.7±0.1 0.2+0.1 −0.05 0.1Min. 0.5 0.5 0.8±0.1 (3) 0.8 (2) +0.1 0.2 −0.05 1.6±0.2 0.2 0.4 0.4 1.2 0.32 1.6±0.2 1.0±0.1 1.2 0.8 0.2 All terminals have same dimensions Abbreviated symbol : 96 (1) Emitter (2) Base (3) Collector DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Symbol M Limits(DTC144T ) UA KA E Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 50 Emitter-base voltage VEBO 5 Collector current IC Collector power dissipation Pc Unit SA V V mA 100 150 200 mW 300 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=50V Emitter cutoff current IEBO − − 0.5 µA VEB=4V Parameter Conditions VCE(sat) − − 0.3 V IC/IB=5mA/0.5mA DC current transfer ratio hFE 100 250 600 − VCE=5V, IC=1mA Input resistance R1 32.9 47 61.1 kΩ Transition frequency fT − 250 − MHz Collector-emitter saturation voltage − VCE=10V, IE=−5mA, f=100MHz ∗ Transition frequency of the device !Packaging specifications Package VMT3 EMT3 UMT3 SMT3 SPT Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − Packaging type Type DTC144TM DTC144TE − DTC144TUA − − DTC144TKA − − − DTC144TSA − − − − − 1k VCE=5V DC CURRENT GAIN : hFE 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves 1 lC/lB=10 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current ∗