DTA114TM / DTA114TE / DTA114TUA DTA114TKA / DTA114TSA Transistors Digital transistors (built-in resistor) DTA114TM / DTA114TE / DTA114TUA DTA114TKA / DTA114TSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !Equivalent circuit C B R1 E B : Base C : Collector E : Emitter !Structure PNP digital transistor (With single built in resistor) !External dimensions (Units : mm) DTA114TM DTA114TE 1.2 0.8 1.6±0.2 1.0±0.1 0.2 0.5 0.5 +0.1 0.2−0.05 0.8 (2) (3) 0.4 0.4 1.2 0.32 0.2 0.7±0.1 +0.1 0.2−0.05 0.55±0.1 (1) Base (2) Emitter (3) Collector ROHM : VMT3 (3) +0.1 0.3 −0.05 ROHM : EMT3 Abbreviated symbol : 94 DTA114TKA 0.8±0.1 0.95 0.95 (2) (2) 0~0.1 Abbreviated symbol : 94 (3) (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions Abbreviated symbol : 94 4±0.2 2±0.2 (15Min.) 5 ROHM : SPT EIAJ : SC-72 3Min. 3±0.2 DTA114TSA 0.15 0.45+ −0.05 0.4 2.5 + −0.1 (1) (2) (3) 0.5 0~0.1 0.15 0.45 + −0.05 (1) Emitter (2) Collector (3) Base 0.3Min. 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions 2.8±0.2 2.1±0.1 (1) 1.6+0.2 −0.1 (3) ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector 1.1+0.2 −0.1 1.9±0.2 0.7±0.1 0.2 1.25±0.1 (1) 2.9±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.15±0.05 Abbreviated symbol : 94 2.0±0.2 0.1Min. DTA114TUA 0~0.1 0.1Min. 0.15Max. (2) 0.8±0.1 0.13 0~0.1 0.5 0.22 (1) 1.6±0.2 (1) (1) Emitter (2) Base (3) Collector DTA114TM / DTA114TE / DTA114TUA DTA114TKA / DTA114TSA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Limits(DTA114T Symbol M E UA KA ) Unit SA Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 150 200 300 mW °C 150 −55~+150 °C !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA ICBO − − −0.5 µA VCB=−50V VEB=−4V Parameter Collector cutoff current Conditions IEBO − − −0.5 µA VCE(sat) − − −0.3 V IC/IB=−10mA/−1mA DC current transfer ratio hFE 100 250 600 − VCE=−5V, IC=−1mA Input resistance R1 7 10 13 kΩ Transition frequency fT − 250 − MHz Emitter cutoff current Collector-emitter saturation voltage ∗ Transition frequency of the device !Packaging specifications Type Package VMT3 EMT3 UMT3 SMT3 SPT Package type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − DTA114TM DTA114TE − DTA114TUA − − DTA114TKA − − − DTA114TSA − − − − − − VCE=−10V, IE=5mA, f=100MHz ∗ DTA114TM / DTA114TE / DTA114TUA DTA114TKA / DTA114TSA Transistors 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves −1 lC/lB=20 −500m −200m −100m Ta=100°C 25°C −40°C −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current