RF2001T3D : Diodes

Fast recovery diodes
Datasheet
RF2001T3D
Applications
General rectification
Dimensions (Unit : mm)
Structure
4.5±0.3
0.1
Features
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
8.0±0.2
12.0±0.2
15.0±0.4
0.2
8.0
(1) (2) (3)
5.0±0.2
①
1.2
13.5MIN
Construction
Silicon epitaxial planar
2.8±0.2
0.1
10.0±0.3
0.1
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
Absoslute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
Storage temoerature
Limits
Symbol
350
VRM
300
VR
20
Io
100
IFSM
150
Tj
Tstg
55 to 150
(*1)Business frequency, Rating of R-load, Tc=113C　1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Unit
V
V
A
A
C
C
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
1.3
Unit
V
Reverse current
IR
-
-
10
μA
Reverse recovery time
trr
-
-
25
ns
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1/3
Conditions
IF=10A
VR=300V
IF=0.5A,IR=1A,Irr=0.25*IR
2015.06 - Rev.E
Data Sheet
RF2001T3D
Electrical characteristics curves
10
Ta=150C
100000
1000
Ta=125C
Ta=150C
f=1MHz
0.1
Ta=125C
Ta=25C
Ta=75C
Ta=-25C
0.01
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD CURRENT:I F(A)
1
REVERSE CURRENT:IR (nA)
10000
Ta=75C
100
Ta=25C
10
Ta=-25C
1
100
10
0.001
0 10 20 30 40 50 60 70 80 90 10 11 12
0 0 0 0 0 0 0 0 0 00 00 00
1
0.1
0
50
200
250
0
300
1.14
200
150
100
AVE:29.7nA
1.13
50
AVE:1.135V
360
350
AVE:356.9pF
340
330
320
1000
50
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
Ifsm
PEAK SURGE
FORWARD CURRENT:I FSM(A)
100
REVERSE RECOVERY TIME:trr(ns)
8.3ms
150
370
Ct DISPERSION MAP
30
1cyc
15
10
5
AVE:20.3ns
AVE:157.0A
8.3ms
100
0
0
10
1
t
100
10
40
Mounted on epoxy board
IF=5A
IM=100mA
D=1/2
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
DC
30
10
1ms
time
Rth(j-a)
300us
Rth(j-c)
1
0.001
Sin(=180)
20
10
0
0.1
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
0.1
10
trr DISPERSION MAP
100
8.3ms
1cyc
1
IFSM DISPERSION MAP
1000
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
380
IR DISPERSION MAP
Ifsm
25
300
VF DISPERSION MAP
200
20
310
0
1.12
15
390
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1.15
10
400
Ta=25C
V R=300V
n=30pcs
250
REVERSE CURRENT:IR(nA)
Ta=25C
IF=10A
n=30pcs
1.16
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
1.17
PEAK SURGE
FORWARD CURRENT:I FSM(A)
150
REVERSE VOLTAGE:V R(V)
V R-IR CHARACTERISTICS
FORWARD VOLTAGE:V F(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE:V F(mV)
100
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2015.06 - Rev.E
Data Sheet
50
45
45
Io
0A
40
0V
VR
t
35
D=1/2
30
DC
T
D=t/T
VR =150V
Tj=150C
25
20
15
10
Sin(=180)
5
0V
VR
t
40
DC
35
T
30
D=t/T
VR=150V
Tj=150C
D=1/2
25
20
15
Sin(=180)
10
20
15
10
AVE:11.6kV
5
0
0
25
No break at 30kV
25
5
0
0
30
Io
0A
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
RF2001T3D
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
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150
0
25
50
75
100
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
3/3
125
150
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2015.06 - Rev.E
Notice
Notes
1) The information contained herein is subject to change without notice.
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provided only to illustrate the standard usage and operations of the Products. The peripheral
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R1102A