DAN202K : Diodes

Switching Diode
Datasheet
DAN202K
Land size figure (Unit : mm)
Dimensions (Unit : mm)
Applications
Ultra high speed switching
Each lead has same dimension
Features
1) Small mold type. (SMD3)
2) High reliability
2.4
1.0MIN.
0.8MIN.
0.95
1.9
SMD3
Construction
Silicon epitaxial planar
0.1
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Limits
80
80
300
450
100
150
4
6
200
150
3.2±0.1
8.0±0.2
0~0.5
3.2±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repatitive peak)
VRM
VR
Reverse voltage (DC)
IFM
Forward current (Single)
IFM
Forward current (Double)
Average rectified forward current (Single)
Io
Average rectified forward current (double)
Io
Isurge
Surge current (t=1us) (Single)
Isurge
Surge current (t=1us) (Double)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
φ1.05MIN
4.0±0.1
3.2±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
1.35±0.1
Unit
V
V
mA
mA
mA
mA
A
A
mW
°C
°C
55 to 150
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
IF=100mA
Reverse current
IR
-
-
0.1
μA
VR=70V
Capacitance between terminals
Ct
-
-
3.5
pF
Reverse recovery time
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
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© 2015 ROHM Co., Ltd. All rights reserved.
1/2
2015.05 - Rev.D
Data Sheet
DAN202K
Ta=150℃
10000
Ta=125℃
10
Ta=25℃
Ta=150℃
Ta=-25℃
1
f=1MHz
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0.1
0.01
0
100 200 300 400 500 600 700 800 900 1000
950
1
0.1
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
20 30 40 50 60 70
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
80
0
Ta=25℃
VR=80V
n=30pcs
90
930
920
910
80
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
940
70
60
50
40
AVE:9.655nA
30
20
AVE:921.7m
900
7
6
5
4
AVE:1.17pF
3
2
1
0
0
Ct DISPERSION MAP
IR DISPERSION MAP
10
10
5
AVE:3.50A
8
7
6
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
5
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
9
REVERSE RECOVERY TIME:trr(ns)
1cyc
Ifsm
15
5
4
3
2
1
0
Ifsm
4
8.3ms 8.3ms
1cyc
3
2
1
AVE:1.93ns
0
0
1
IFSM DISPERSION MAP
trr DISPERSION MAP
t
10
1
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IM=100mA
10
1ms
IF=10A
time
8
7
6
5
4
2
0
0.01
0.1
1
10
100
TIME:t(ms)
Rth-t CHARACTERISTICS
2/2
AVE:2.54kV
3
AVE:0.97kV
1
300us
1
0.001
100
9
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
20
Ta=25℃
VR=6V
f=1MHz
n=10pcs
8
10
VF DISPERSION MAP
20
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
100
Ta=25℃
IF=100mA
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
10
1000
0.1
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=125℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75℃
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
100
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2015.05 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
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ROHM.
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provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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R1102A