DTC125T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC 100mA R1 200kΩ UMT3 SMT3 50V DTC125TUA SOT-323(SC-70) DTC125TKA SOT-346(SC-59) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA125T series 6) Lead Free/RoHS Compliant. l Inner circuit B: BASE C: COLLECTOR E: EMITTER l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit l Packaging specifications Part No. DTC125TUA DTC125TKA Package Package size Taping code UMT3 SMT3 2021 2928 T106 T146 Reel size Tape width (mm) (mm) 180 180 8 8 Basic ordering unit.(pcs) Marking 3000 3000 0A 0A www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/5 20121023 - Rev.001 DTC125T series Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Collector current Power dissipation DTC125TUA 200 PD*1 DTC125TKA Junction temperature Range of storage temperature mW 200 Tj 150 ℃ Tstg -55 to +150 ℃ l Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50μA 50 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V Emitter-base breakdown voltage BVEBO IE = 50μA 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 μA Emitter cut-off current IEBO VEB = 4V - - 0.5 μA IC / IB = 0.5mA / 0.05mA - - 0.3 V 100 250 600 - 140 200 260 kΩ - 250 - MHz Collector-emitter saturation voltage VCE(sat) DC current gain hFE Input resistance R1 Transition frequency f T*2 VCE = 5V, IC = 1mA VCE = 10V, IE = -5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/5 20121023 - Rev.001 DTC125T series Datasheet l Electrical characteristic curves (Ta =25°C) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs. Collector Current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/5 20121023 - Rev.001 DTC125T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/5 20121023 - Rev.001 DTC125T series Datasheet l Dimensions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/5 20121023 - Rev.001