RSX051VAM30 : Diode

Schottky Barrier Diode
Data Sheet
RSX051VAM30
lApplication
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
1.1
General rectification
0.17±0.04
1.4±0.1
0.6±0.1
2.0
0.8±0.05
(1)
2) High reliability
0.8
1) Small mold type (TUMD2M)
2.5±0.1
2.0±0.1
0.5
lFeatures
TUMD2M
0~0.1
(1)Cathode
lStructure
3) Low VF and low IR
(2)
ROHM : TUMD2M
Manufacture date and factory
(2) Anode
lTaping Dimensions (Unit : mm)
2.0±0.05
+0.1
Φ 1.5 -0
3.5±0.05
4.0±0.1
2.8±0.05
5.5±0.2
4.0±0.1
0.25±0.05
8.0±0.2
Silicon epitaxial planar type
1.75±0.1
lConstruction
+0.2
1.53±0.03
0.9±0.08
Φ 1.0 -0
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
30
V
Reverse Voltage
VR
Direct Reverse Voltage
30
V
Average Forward Rectified Current
Io
Glass epoxy board mounted, 60Hz half sin Wave,
0.5
A
Non-repetitive Forward Current Surge Peak
IFSM
resistive load, Tc=130ºC Max.
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
5
A
Tj
-
150
°C
Tstg
-
-40 to +150
°C
Operating Junction Temperature
Storage Temperature
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward Voltage
VF
IF=0.5A
-
Reverse Current
IR
VR=30V
-
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1/5
Typ. Max. Unit
0.35 0.39
40
200
V
mA
2014.11 - Rev.A
Data Sheet
RSX051VAM30
lElectrical Characteristic Curves
100000
Tj = 150°C
REVERSE CURRENT : IR(mA)
FORWARD CURRENT : IF(A)
1
Tj = 125°C
0.1
Tj = 75°C
Tj = 25°C
0.01
Tj = -25°C
10000
1000
Tj = 75°C
100
10
Tj = 25°C
1
Tj = -25°C
0.1
0.001
0
100
200
300
400
0
500
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
390
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF(mV)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj = 125°C
Tj = 150°C
100
10
Tj=25°C
IF=0.5A
n=30pcs
380
370
360
Ave. : 354.9mV
350
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VF DISPERSION MAP
2/5
2014.11 - Rev.A
Data Sheet
RSX051VAM30
lElectrical Characteristic Curves
195
Tj=25°C
VR=30V
n=30pcs
80
60
Ave. : 39.1mA
40
185
180
175
170
165
Ave. : 160pF
160
155
150
20
IR DISPERSION MAP
Ct DISPERSION MAP
40
40
IFSM
1cyc
35
8.3ms
Ta=25°C
30
25
Ave. : 16.4A
20
15
10
5
REVERSE RECOVERY TIME : trr(ns)
45
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Tj=25°C
f=1MHz
VR=0V
n=10pcs
190
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(mA)
100
0
Tj=25°C
IF=0.5A
IR=1.0A
Irr / IR=0.25
n=10pcs
35
30
25
20
15
Ave. : 10.4ns
10
5
0
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2014.11 - Rev.A
Data Sheet
RSX051VAM30
lElectrical Characteristic Curves
100
IFSM
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
100
8.3 8.3
ms ms
1cyc
Ta=25°C
10
1cyc
IFSM
time
Ta=25°C
10
1
1
1
10
1
100
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLECHARACTERISTICS
0.4
6
Tj = 150°C
Tj = 150°C
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : PF (W)
5
0.3
D = 1/2
0.2
Sin(θ=180)
0.1
DC
4
3
Sin(θ=180)
D = 1/2
2
DC
1
0
0.0
0
0.2
0.4
0.6
0.8
0
1
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
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10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
4/5
2014.11 - Rev.A
Data Sheet
RSX051VAM30
lElectrical Characteristic Curves
1.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxy board mounted
10
IM=10mA
IF=0.5A
time
VR
t
D=t/T
VR=VRM/2
Tj=150°C
Glass epoxy board mounted
T
1
DC
D = 1/2
0.5
Sin(θ=180)
1ms 300ms
1
0.001
0
0.01
0.1
1
10
100
0
1000
TIME : t(s)
Rth-t CHARACTERISTICS
D=t/T
VR=VRM/2
Tj=150°C
Glass epoxy board mounted
DC
D = 1/2
0.5
Sin(θ=180)
0
25
50
75
100
125
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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100
125
150
25
20
15
AVE. : 11kV
10
5
0
0
75
No destruction at 30kV
t
T
1
50
30
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
VR
25
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
IO
0A
0V
1.5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
IO
0A
0V
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
5/5
2014.11 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102A