RBR1MM60A : Diodes

Schottky Barrier Diode
Data Sheet
RBR1MM60A
lApplication
lDimensions (Unit : mm)
General rectification
lLand Size Figure (Unit : mm)
0.1±0.1
0.05
1.2
0.85
1.6±0.1
1) Small power mold type
(PMDU)
3.05
3.5±0.2
2.6±0.1
lFeatures
PMDU
2) High reliability
Cathode
3) Low VF
0.9±0.1
lStructure
0.8±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
Anode
lTaping Dimensions (Unit : mm)
φf 1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
8.0±0.2
3.5±0.05
2.0±0.05
3.71±0.1
4.0±0.1
Silicon epitaxial planar type
1.75±0.1
lConstruction
φf 1.0±0.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
60
V
Reverse voltage
VR
Direct reverse voltage
60
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
1
A
20
A
Non-repetitive forward current surge peak
IFSM
resistive load , Tc=120ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Tj
-
150
°C
Tstg
-
-55 to +150
°C
Operating junction temperature
Storage temperature
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=1.0A
-
-
0.53
V
Reverse current
IR
VR=60V
-
-
75
mA
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1/5
Typ. Max. Unit
2015.05 - Rev.A
Data Sheet
RBR1MM60A
lElectrical Characteristic Curves
100000
10
REVERSE CURRENT : IR (mA)
FORWARD CURRENT : IF (A)
Tj = 150°C
Tj = 150°C
Tj = 125°C
1
0.1
Tj = 75°C
Tj = 25°C
0.01
Tj = -25°C
10000
1000
100
Tj = 75°C
10
1
Tj = 25°C
0.1
Tj = -25°C
0.01
0.001
0.001
0
200
400
600
800
0
1000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
50
60
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
550
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF (mV)
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
Tj = 125°C
100
10
Tj=25°C
IF=1.0A
n=30pcs
540
530
520
510
Ave. : 487.5mV
500
490
480
470
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VF DISPERSION MAP
2/5
2015.05 - Rev.A
Data Sheet
RBR1MM60A
lElectrical Characteristic Curves
200
Tj=25°C
VR=60V
n=30pcs
35
30
25
20
Ave. : 12.4mA
15
10
190
185
180
175
165
0
160
IR DISPERSION MAP
Ct DISPERSION MAP
50
110
IFSM
100
1cyc
8.3ms
Ta=25°C
90
Ave. : 68.4A
70
60
50
REVERSE RECOVERY TIME : trr (ns)
120
PEAK SURGE
FORWARD CURRENT : IFSM (A)
Ave. : 167pF
170
5
80
Tj=25°C
f=1MHz
VR=0V
n=10pcs
195
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
REVERSE CURRENT : IR (mA)
40
40
Tj=25°C
IF=0.1A
IR=0.1A
Irr / IR=0.10
n=10pcs
45
40
35
30
25
20
Ave. : 11.2ns
15
10
5
0
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2015.05 - Rev.A
Data Sheet
RBR1MM60A
lElectrical Characteristic Curves
1000
IFSM
PEAK SURGE
FORWARD CURRENT : IFSM (A)
PEAK SURGE
FORWARD CURRENT : IFSM (A)
1000
8.3 8.3
ms ms
1cyc
Ta=25°C
100
10
1cyc
IFSM
time
Ta=25°C
100
10
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME : t (ms)
IFSM-t CHARACTERISTICS
3
1.2
Tj = 150°C
Tj = 150°C
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : PF (W)
1.0
0.8
D = 1/2
0.6
Sin(θ=180)
0.4
DC
2
Sin(θ=180)
D = 1/2
1
DC
0.2
0
0.0
0.0
0.5
1.0
1.5
0
2.0
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
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10
20
30
40
50
60
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
4/5
2015.05 - Rev.A
Data Sheet
RBR1MM60A
lElectrical Characteristic Curves
Rth(j-a)
100
Rth(j-c)
10
Glass epoxy board mounted
IM=100mA
IF=2A
1
time
IO
0A
0V
VR
t
T
2
DC
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
1
Sin(θ=180)
1ms 300ms
0.1
0.001
0.01
0.1
1
10
100
0
1000
0
3
ELECTROSTATIC
DISCHARGE TEST : ESD (kV)
IO
0A
0V
t
T
2
DC
50
75
100
125
150
30
Glass epoxy board mounted
VR
25
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
TIME : t (s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Glass epoxy board mounted
3
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
1
Sin(θ=180)
0
25
20
15
10
Ave. : 2.1kV
5
Ave. : 1.3kV
0
0
25
50
75
100
125
150
C=200pF
R=0W
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
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© 2015 ROHM Co., Ltd. All rights reserved.
C=100pF
R=1.5kW
ESD DISPERSION MAP
5/5
2015.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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the recommended usage conditions and specifications contained herein.
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information.
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R1102A