RB521G-40 : Diodes

Schottky Barrier Diode
Data Sheet
RB521G-40
lDimensions (Unit : mm)
0.13±0.05
0.6±0.05
0.5
1.0±0.05
1) Ultra small mold type
(VMD2)
1.4±0.1
lFeatures
1.2
(1)
0.5
General rectification
lLand Size Figure (Unit : mm)
(0.25±0.05)
lApplication
0~0.1
VMD2
2) High reliability
(2)
3) Super low VF
(1) Cathode
0.27±0.03
lStructure
0.5±0.05
ROHM : VMD2
Dot (Manufacture year, week, factory)
lConstruction
(2) Anode
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
0
f1.5± 0.1
2.0±0.05
0.18±0.05
0.3
8.0±
0.1
3.5±0.05
0.4
1.11±0.05
2.1±0.1
1.75±0.1
4.0±0.1
0.3
f0.5
0.76±0.1
4.0±0.1
2.0±0.05
0.65±0.05
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
40
V
Reverse voltage
VR
Direct reverse voltage
40
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
100
mA
1
A
Non-repetitive forward current surge peak
IFSM
Tj
-
125
°C
Tstg
-
-55 to +125
°C
Operating junction temperature
Storage temperature
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=100mA
-
-
0.61
V
Reverse current
IR
VR=40V
-
-
100
mA
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1/5
Typ. Max. Unit
2015.05 - Rev.A
Data Sheet
RB521G-40
lElectrical Characteristic Curves
10000
REVERSE CURRENT : IR (mA)
FORWARD CURRENT : IF (mA)
1000
Tj = 125°C
100
10
Tj = 75°C
Tj = 25°C
1000
100
Tj = 75°C
10
Tj = 25°C
1
Tj = -25°C
0.1
Tj = -25°C
0.01
1
0
0 100 200 300 400 500 600 700 800 9001000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100
540
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF (mV)
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
Tj = 125°C
10
1
Tj=25°C
IF=100mA
n=30pcs
530
520
510
500
Ave. : 481.3mV
490
480
470
460
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VF DISPERSION MAP
2/5
2015.05 - Rev.A
Data Sheet
RB521G-40
lElectrical Characteristic Curves
30
Tj=25°C
VR=40V
n=30pcs
40
35
30
25
20
Ave. : 14.6mA
15
CAPACITANCE BETWEEN
TERMINALS : Ct (pF)
REVERSE CURRENT : IR (mA)
45
25
20
Ave. : 15pF
15
10
5
10
IR DISPERSION MAP
Ct DISPERSION MAP
35
35
IFSM
30
1cyc
8.3ms
Ta=25°C
25
20
15
10
Ave. : 3.4A
5
REVERSE RECOVERY TIME : trr (ns)
40
PEAK SURGE
FORWARD CURRENT : IFSM (A)
Tj=25°C
f=1MHz
VR=0V
n=10pcs
Tj=25°C
IF=0.1A
IR=0.1A
Irr / IR=0.10
n=10pcs
30
25
20
15
10
Ave. : 6.4ns
5
0
0
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2015.05 - Rev.A
Data Sheet
RB521G-40
lElectrical Characteristic Curves
10
10
PEAK SURGE
FORWARD CURRENT : IFSM (A)
PEAK SURGE
FORWARD CURRENT : IFSM (A)
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
1
time
Ta=25°C
1
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME : t (ms)
IFSM-t CHARACTERISTICS
0.30
0.14
Tj = 125°C
Tj = 125°C
0.12
0.25
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : PF (W)
1cyc
IFSM
0.10
D = 1/2
0.08
Sin(θ=180)
0.06
DC
0.04
0.20
0.15
Sin(θ=180)
D = 1/2
0.10
DC
0.05
0.02
0.00
0.00
0
50
100
150
200
0
AVERAGE RECTIFIED
FORWARD CURRENT : Io (mA)
Io-PF CHARACTERISTICS
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10
20
30
40
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
4/5
2015.05 - Rev.A
Data Sheet
RB521G-40
lElectrical Characteristic Curves
300
100
Rth(j-c)
Glass epoxy board mounted
10
IM=10mA
IF=0.2A
time
250
t
VR
D=t/T
VR=VRM/2
Tj=125°C
T
200
DC
150
D = 1/2
100
Sin(θ=180)
50
1ms 300ms
1
0.001
0
0.01
0.1
1
10
100
0
1000
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
TIME : t (s)
Rth-t CHARACTERISTICS
20
300
IO
0A
0V
250
t
VR
T
200
DC
150
ELECTROSTATIC
DISCHARGE TEST : ESD (kV)
AVERAGE RECTIFIED
FORWARD CURRENT : Io (mA)
IO
0A
0V
Rth(j-a)
AVERAGE RECTIFIED
FORWARD CURRENT : Io (mA)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
D=t/T
VR=VRM/2
Tj=125°C
D = 1/2
100
Sin(θ=180)
50
18
16
14
12
Ave. : 9.9kV
10
8
6
4
Ave. : 1.7kV
2
0
0
0
25
50
75
100
125
C=200pF
R=0W
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
C=100pF
R=1.5kW
ESD DISPERSION MAP
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5/5
2015.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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information.
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R1102A