RB21VAM90 : Diode

Schottky Barrier Diode
Data Sheet
RB021VAM90
lApplication
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
1.1
General rectification
0.17±0.04
1.4±0.1
0.6±0.1
2.0
0.8±0.05
(1)
2) High reliability
0.8
1) Small mold type (TUMD2M)
2.5±0.1
2.0±0.1
0.5
lFeatures
TUMD2M
0~0.1
(1)Cathode
lStructure
3) Low VF
(2)
ROHM : TUMD2M
Manufacture date and factory
(2) Anode
lTaping Dimensions (Unit : mm)
2.0±0.05
Silicon epitaxial planar type
+0.1
Φ 1.5 -0
0.25±0.05
8.0±0.2
3.5±0.05
4.0±0.1
2.8±0.05
5.5±0.2
4.0±0.1
1.75±0.1
lConstruction
+0.2
1.53±0.03
0.9±0.08
Φ 1.0 -0
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
90
V
Reverse Voltage
VR
Direct Reverse Voltage
90
V
Average Forward Rectified Current
Io
60Hz half sin Wave, resistive load, Tc=105°C Max.
0.2
A
Non-repetitive Forward Current Surge Peak
IFSM
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
5
A
Tj
-
125
°C
Tstg
-
-55 to +125
°C
Operating Junction Temperature
Storage Temperature
Glass epoxy board mounted,
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward Voltage
VF
IF=0.2A
-
-
0.49
V
Reverse Current
IR
VR=90V
-
-
900
mA
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1/5
Typ. Max. Unit
2014.11 - Rev.A
Data Sheet
RB021VAM90
lElectrical Characteristic Curves
1000
100000
Tj = 125°C
REVERSE CURRENT : IR(mA)
FORWARD CURRENT : IF(mA)
Tj = 125°C
Tj = 75°C
100
Tj = 25°C
10
Tj = -25°C
10000
Tj = 75°C
1000
100
10
Tj = -25°C
1
0.1
1
0
100
200
300
400
500
600
0
700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
480
100
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF(mV)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj = 25°C
10
1
Tj=25°C
IF=0.2A
n=30pcs
475
470
465
460
455
450
Ave. : 442.8mV
445
440
435
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VF DISPERSION MAP
2/5
2014.11 - Rev.A
Data Sheet
RB021VAM90
lElectrical Characteristic Curves
100
70
REVERSE CURRENT : IR(mA)
90
80
70
60
50
Ave. : 31.0mA
40
30
20
68
67
66
65
0
64
62
IR DISPERSION MAP
Ct DISPERSION MAP
40
IFSM
30
1cyc
8.3ms
Ta=25°C
25
Ave. : 16.9A
15
10
5
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
40
20
Ave. : 64.4pF
63
10
35
Tj=25°C
f=1MHz
VR=0V
n=10pcs
69
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj=25°C
VR=90V
n=30pcs
Tj=25°C
IF=0.5A
IR=1.0A
Irr / IR=0.25
n=10pcs
35
30
25
20
15
10
Ave. : 6.4ns
5
0
0
IFSM DISPERSION MAP
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trr DISPERSION MAP
3/5
2014.11 - Rev.A
Data Sheet
RB021VAM90
lElectrical Characteristic Curves
1000
IFSM
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
1000
8.3 8.3
ms ms
1cyc
100
Ta=25°C
10
1
1cyc
IFSM
time
Ta=25°C
100
10
1
1
10
100
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLECHARACTERISTICS
0.30
4.0
Tj = 125°C
Tj = 125°C
3.5
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : PF (W)
0.25
0.20
D = 1/2
0.15
Sin(θ=180)
0.10
DC
3.0
2.5
2.0
Sin(θ=180)
D = 1/2
1.5
DC
1.0
0.05
0.5
0.00
0.0
0
0.1
0.2
0.3
0.4
0
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
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10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
4/5
2014.11 - Rev.A
Data Sheet
RB021VAM90
lElectrical Characteristic Curves
0.6
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxy board mounted
10
IM=100mA
IF=0.5A
time
0.5
VR
t
T
0.4
DC
0.3
D=t/T
VR=VRM/2
Tj=125°C
D = 1/2
0.2
Sin(θ=180)
0.1
1ms 300ms
1
0.001
0.0
0.01
0.1
1
10
100
0
1000
TIME : t(s)
Rth-t CHARACTERISTICS
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
0.6
30
IO
0A
0V
0.5
t
VR
T
0.4
DC
0.3
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
IO
0A
0V
D=t/T
VR=VRM/2
Tj=125°C
D = 1/2
0.2
Sin(θ=180)
0.1
0.0
20
15
10
5
0
0
25
50
75
100
125
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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AVE. : 22.7kV
25
AVE. : 2.5kV
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
5/5
2014.11 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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R1102A