RB238T150 : Diode

Schottky Barrier Diode
Data Sheet
RB238T150
lApplication
lDimensions (Unit : mm)
lStructure
4.5± 0.3
0.1
Switching power supply
10.0±
0.3
0.1
2.8± 0.2
0.1
f3.2±0.2
2) High reliability
1
5.0±0.2
3) Super low IR
1.2
1.3
lConstruction
0.8
(1)
(2)
(3)
Anode Cathode Anode
14.0±0.5
8.0±0.2
12.0±0.2
1) Cathode common type
15.0± 0.4
0.2
lFeatures
2.6±0.5
Silicon epitaxial planar type
0.1
0.75±0.05
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
1
: Manufacture Date
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
150
V
Reverse voltage
VR
Direct reverse voltage
150
V
Io
Glass epoxy board mounted, 60Hz half sin wave,
40
A
100
A
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
Storage temperature
IFSM
resistive load,Tc=85ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Tj
-
150
°C
Tstg
-
-55 to +150
°C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=20A
-
-
0.87
V
Reverse current
IR
VR=150V
-
-
30
mA
Rth(j-c)
Junction to case
-
-
2
°C / W
Thermal resistance
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1/5
Typ. Max. Unit
2015.01 - Rev.A
Data Sheet
RB238T150
lElectrical Characteristic Curves
10000
100
Tj = 150°C
Tj = 150°C
REVERSE CURRENT : IR(mA)
FORWARD CURRENT : IF(A)
Tj = 125°C
10
Tj = 75°C
1
Tj = 25°C
0.1
Tj = -25°C
0.01
1000
100
10
Tj = 75°C
1
0.1
Tj = 25°C
0.01
Tj = -25°C
0.001
0.0001
0.001
0
200
400
600
800
1000
0
1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
50
100
150
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10000
860
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF(mV)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj = 125°C
1000
100
Tj=25°C
IF=20A
n=30pcs
850
840
830
820
810
Ave. : 786.7mV
800
790
780
770
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
VF DISPERSION MAP
2/5
2015.01 - Rev.A
Data Sheet
RB238T150
lElectrical Characteristic Curves
1900
Tj=25°C
VR=150V
n=30pcs
REVERSE CURRENT : IR(mA)
2.6
2.4
2.2
2
1.8
Ave. : 1.3mA
1.6
1.4
1.2
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
2.8
Tj=25°C
f=1MHz
VR=0V
n=10pcs
1800
1700
Ave. : 1630pF
1600
1
1500
0.8
IR DISPERSION MAP
Ct DISPERSION MAP
50
700
IFSM
1cyc
650
8.3ms
Ta=25°C
600
550
500
Ave. : 418A
450
400
350
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
750
300
Tj=25°C
IF=0.5A
IR=1.0A
Irr / IR=0.25
n=10pcs
45
40
35
30
Ave. : 22.2ns
25
20
15
10
IFSM DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
trr DISPERSION MAP
3/5
2015.01 - Rev.A
Data Sheet
RB238T150
lElectrical Characteristic Curves
1000
1000
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
100
1cyc
IFSM
time
Ta=25°C
100
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
2.0
70
Tj = 150°C
Tj = 150°C
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : PF (W)
60
50
D = 1/2
40
Sin(θ=180)
30
DC
20
1.5
1.0
Sin(θ=180)
D = 1/2
0.5
DC
10
0.0
0
0
20
40
60
0
80
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
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50
100
150
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
4/5
2015.01 - Rev.A
Data Sheet
RB238T150
lElectrical Characteristic Curves
100
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
10
Rth(j-a)
Rth(j-c)
1
Glass epoxy board mounted
IM=100mA
IF=20A
time
80
VR
t
T
60
D=t/T
VR=VRM/2
Tj=150°C
DC
40
D = 1/2
20
Sin(θ=180)
1ms 300ms
0.1
0.001
0
0.01
0.1
1
10
100
1000
0
TIME : t(s)
Rth-t CHARACTERISTICS
75
100
125
150
10
t
T
80
50
11
DC
D=t/T
VR=VRM/2
Tj=150°C
60
D = 1/2
40
Sin(θ=180)
20
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
VR
25
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
IO
0A
0V
100
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
IO
0A
0V
9
AVE. : 9.9kV
8
7
6
5
4
3
2
AVE. : 1kV
1
0
0
0
25
50
75
100
125
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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© 2015 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
5/5
2015.01 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
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the recommended usage conditions and specifications contained herein.
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information.
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R1102A