BR93G56-3B

Datasheet
Serial EEPROM series Standard EEPROM
MicroWire BUS EEPROM (3-Wire)
BR93G56-3B
General Description
BR93G56-3B is serial EEPROM of Serial 3-Line Interface Method.
They are 16bit organization and CS PIN is the third PIN in their PIN configuration.
Features
Packages W(Typ) x D(Typ)x H(Max)
■ 3-Line Communications of chip select, serial clock,
serial data input / output (the case where input and
output are shared)
■ Operations available at High Speed 3MHz clock
(4.5V to 5.5V)
■ High Speed Write available (Write Time 5ms max）
■ Same package and pin configuration from 1Kbit to
16Kbit
■ 1.7V to 5.5V Single Power Source Operation
■ Address Auto Increment function at Read Operation
■ Write Error Prevention Function
» Write Prohibition at Power On
» Write Prohibition by Command Code
» Write Error Prevention Function at Low Voltage
■ Self-timed Programming Cycle
■ Program Condition Display by READY / BUSY
■ Compact Package
SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8
TSSOP-B8J DIP-T8 VSON008X2030
■ More than 40 years data retention
■ More than 1 million write cycles
■ Initial delivery state all addresses FFFFh (X16)
DIP-T8
TSSOP-B8
9.30mm x 6.50mm x 7.10mm
3.00mm x 6.40mm x 1.20mm
SOP8
TSSOP-B8J
5.00mm x 6.20mm x 1.71mm
3.00mm x 4.90mm x 1.10mm
SOP- J8
MSOP8
4.90mm x 6.00mm x 1.65mm
2.90mm x 4.00mm x 0.90mm
SSOP-B8
VSON008X2030
3.00mm x 6.40mm x 1.35mm
2.00mm x 3.00mm x 0.60mm
BR93G56-3B
Capacity
Bit Format
Type
Power Source
Voltage
DIP-T8(1)
SOP8
SOP-J8
2Kbit
128×16
BR93G56-3B
1.7V to 5.5V
●
●
●
SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8
●
●
●
●
VSON008
X2030
●
(1) DIP-T8 is not halogen free package
○Product structure：Silicon monolithic integrated circuit
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○This product has no designed protection against radioactive rays
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Datasheet
BR93G56-3B
Absolute Maximum Ratings
Parameter
Supply Voltage
Permissible
Dissipation
Symbol
Rating
Unit
Vcc
-0.3 to +6.5
V
Storage
Temperature
Operating
Temperature
Input Voltage/
Output Voltage
Junction
Temperature
800 (DIP-T8)
Derate by 8.0mW/°C when operating above Ta=25°C
450 (SOP8)
Derate by 4.5mW/°C when operating above Ta=25°C
450 (SOP-J8)
Derate by 4.5mW/°C when operating above Ta=25°C
300 (SSOP-B8)
Pd
Remark
mW
330 (TSSOP-B8)
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 3.3mW/°C when operating above Ta=25°C
310 (TSSOP-B8J)
Derate by 3.1mW/°C when operating above Ta=25°C
310 (MSOP8)
Derate by 3.1mW/°C when operating above Ta=25°C
300 (VSON008X2030)
Derate by 3.0mW/°C when operating above Ta=25°C
Tstg
－65 to +150
℃
Topr
－40 to +85
℃
‐
-0.3 to Vcc+1.0
V
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not under -0.8V.
Tjmax
150
℃
Junction temperature at the storage condition
Memory Cell Characteristics (Vcc=1.7V to 5.5V)
Limit
Parameter
Unit
Conditions
-
Times
Ta=25℃
-
-
Years
Ta=25℃
Symbol
Limit
Unit
Supply Voltage
VCC
1.7 to 5.5
Input Voltage
VIN
0 to VCC
Write Cycles (1)
Min
Typ
Max
1,000,000
-
40
Data Retention (1)
○Initial data in all addresses are FFFFh(X16) upon delivery.
(1) Not 100% TESTED
Recommended Operating Ratings
Parameter
V
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Datasheet
BR93G56-3B
DC Characteristics (Unless otherwise specified, Vcc=1.7V to 5.5V, Ta=-40℃ to +85℃)
Limit
Parameter
Symbol
Unit
Min
Typ
Max
Conditions
Input Low Voltage
VIL
-0.3(1)
-
0.3Vcc
V
1.7V≦Vcc≦5.5V
Input High Voltage
VIH
0.7Vcc
-
Vcc+1.0
V
1.7V≦Vcc≦5.5V
Output Low Voltage 1
VOL1
0
-
0.4
V
IOL=2.1mA, 2.7V≦Vcc≦5.5V
Output Low Voltage 2
VOL2
0
-
0.2
V
IOL=100μA
Output High Voltage 1
VOH1
2.4
-
Vcc
V
IOH=-0.4mA, 2.7V≦Vcc≦5.5V
Output High Voltage 2
VOH2
Vcc-0.2
-
Vcc
V
IOH=-100μA
ILI1
-1
-
+1
µA
VIN=0V to Vcc(CS,SK,DI)
ILO
-1
-
+1
µA
VOUT=0V to Vcc, CS=0V
-
-
1.0
mA
Vcc=1.7V, fSK=1MHz, tE/W=5ms (WRITE)
-
-
2.0
mA
Vcc=5.5V ,fSK=3MHz, tE/W=5ms (WRITE)
-
-
0.5
mA
fSK=1MHz (READ)
-
-
1.0
mA
fSK=3MHz (READ)
-
-
2.0
mA
-
-
3.0
mA
-
-
2.0
µA
Input Leakage
Current1
Output Leakage
Current
ICC1
Supply Current
ICC2
ICC3
Standby Current
ISB1
Vcc=2.5V, fSK=1MHz
tE/W=5ms (WRAL, ERAL)
Vcc=5.5V ,fSK=3MHz
tE/W=5ms (WRAL, ERAL)
CS=0V
(1) When the pulse width is 50ns or less, the Min value of VIL is admissible to -0.8V.
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Datasheet
BR93G56-3B
AC Characteristics (Unless otherwise specified, Vcc=1.7V to 2.5V, Ta=-40℃ to +85℃)
Parameter
Symbol
Limit
Min
Typ
Max
Unit
SK Frequency
fSK
-
-
1
MHz
SK High Time
tSKH
250
-
-
ns
SK Low Time
tSKL
250
-
-
ns
CS Low Time
tCS
250
-
-
ns
CS Setup Time
tCSS
200
-
-
ns
DI Setup Time
tDIS
100
-
-
ns
CS Hold Time
tCSH
0
-
-
ns
DI Hold Time
tDIH
100
-
-
ns
Data “1” Output Delay
tPD1
-
-
400
ns
Data “0” Output Delay
tPD0
-
-
400
ns
Time from CS to Output Establishment
tSV
-
-
400
ns
Time from CS to High-Z
tDF
-
-
200
ns
Write Cycle Time
tE/W
-
-
5
ms
(Unless otherwise specified, Vcc=2.5V to 4.5V, Ta=-40℃ to +85℃)
Parameter
Symbol
Limit
Min
Typ
Max
Unit
SK Frequency
fSK
-
-
2
MHz
SK High Time
tSKH
230
-
-
ns
SK Low Time
tSKL
200
-
-
ns
CS Low Time
tCS
200
-
-
ns
CS Setup Time
tCSS
50
-
-
ns
DI Setup Time
tDIS
100
-
-
ns
CS Hold Time
tCSH
0
-
-
ns
DI Hold Time
tDIH
100
-
-
ns
Data “1” Output Delay
tPD1
-
-
200
ns
Data “0” Output Delay
tPD0
-
-
200
ns
Time from CS to Output Establishment
tSV
-
-
150
ns
Time from CS to High-Z
tDF
-
-
100
ns
Write Cycle Time
tE/W
-
-
5
ms
(Unless otherwise specified, Vcc=4.5V to 5.5V, Ta=-40℃ to +85℃)
Parameter
Symbol
Limit
Min
Typ
Max
Unit
SK Frequency
fSK
-
-
3
MHz
SK High Time
tSKH
100
-
-
ns
SK Low Time
tSKL
100
-
-
ns
CS Low Time
tCS
200
-
-
ns
CS Setup Time
tCSS
50
-
-
ns
DI Setup Time
tDIS
50
-
-
ns
CS Hold Time
tCSH
0
-
-
ns
DI Hold Time
tDIH
50
-
-
ns
Data “1” Output Delay
tPD1
-
-
200
ns
Data “0” Output Delay
tPD0
-
-
200
ns
Time from CS to Output Establishment
tSV
-
-
150
ns
Time from CS to High-Z
tDF
-
-
100
ns
Write Cycle Time
tE/W
-
-
5
ms
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Datasheet
BR93G56-3B
Serial Input / Output Timing
1/ fSK
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tD IH
DI
tPD1
tPD0
DO(READ)
t DF
tSV
STATUS VALID
DO(WRITE)
Figure 1.Serial Input/ Output Timing
1.
2.
3.
4.
5.
6.
7.
Data is taken by DI sync with the rise of SK.
At read operation, data is output from DO in sync with the rise of SK.
The STATUS signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is high, and valid until the next command start bit is input. And, while CS is low, DO becomes High-Z.
After completion of each mode execution, set CS low once for internal circuit reset, and execute the following operation
mode.
1/fSK is the SK clock cycle, even if fSK is maximum, the SK clock cycle can’t be tSKH(Min)+tSKL(Min)
For “Write cycle time tE/W”, please see Figure 36,37,39,40.
For “CS low time tCS”, please see Figure 36,37,39,40.
Block Diagram
CS
Command Decode
Power Source Voltage Detection
Control
SK
Clock Generation
Write
High Voltage Occurrence
Prohibition
DI
Command
Register
Address
Buffer
Address
Decoder
7bit
7bit
2,048 bit
EEPROM
Data
DO
Dummy Bit
Register
16bit
R/W
16bit
Amplifier
Figure 2. Block Diagram
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Datasheet
BR93G56-3B
Pin Configuration
TOP VIEW
NC
GND
DO
DI
BR93G56-3B
:DIP-T8
BR93G56F-3B
:SOP8
BR93G56FJ-3B
:SOP-J8
BR93G56FV-3B
:SSOP-B8
BR93G56FVT-3B
:TSSOP-B8
BR93G56FVJ-3B
:TSSOP-B8J
BR93G56FVM-3B :MSOP8
BR93G56NUX-3B :VSON008X2030
DU
VCC
CS
SK
Figure 3. Pin Configuration
Pin Description
Pin Name
I/O
Description
DU
-
Don’t use terminal(1)
VCC
-
Supply voltage
CS
Input
Chip select input
SK
Input
Serial clock input
DI
Input
Start bit, ope code, address, and serial data input
DO
Output
GND
-
All input / output reference voltage, 0V
NC
-
Non connected terminal(1)
―――――
Serial data output, READY / BUSY STATUS display output
(1) Terminals not used may be set to any of high, low, and OPEN
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Datasheet
BR93G56-3B
Typical Performance Curves
6
6
INPUT HIGH VOLTAGE : VIH(V)
INPUT LOW VOLTAGE : VIL(V)
Ta=-40℃
Ta= 25℃
Ta= 85℃
5
4
3
SPEC
2
1
5
Ta=-40℃
Ta= 25℃
Ta= 85℃
4
3
2
SPEC
1
0
0
0
1
2
3
4
5
6
0
1
2
SUPPLY VOLTAGE: Vcc(V)
4
5
6
SUPPLY VOLTAGE: Vcc(V)
Figure 5. Input Low Voltage vs Supply Voltage
(CS,SK,DI)
Figure 4. Input High Voltage vs Supply Voltage
(CS,SK,DI)
1
1
Ta=-40℃
Ta= 25℃
Ta= 85℃
0.8
OUTPUT LOW VOLTAGE2 : VOL2(V)
OUTPUT LOW VOLTAGE1 : VOL1(V)
3
0.6
SPEC
0.4
0.2
0
Ta=-40℃
Ta= 25℃
Ta= 85℃
0.8
0.6
0.4
SPEC
0.2
0
0
1
2
3
4
5
1
2
3
4
5
OUTPUT LOW CURRENT : IOL(mA)
OUTPUT LOW CURRENT:IOL(mA)
Figure 6. Output Low Voltage1 vs Output Low Current
(Vcc=2.7V)
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Figure 7. Output Low Voltage2 vs Output Low Current
(Vcc=1.7V)
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BR93G56-3B
Typical Performance Curves‐Continued
4
Ta=-40℃
Ta= 25℃
Ta= 85℃
4
OUTPUT HIGH VOLTAGE2 : VOH2(V)
OUTPUT HIGH VOLTAGE1 : VOH1(V)
5
3
SPEC
2
1
0
Ta=-40℃
Ta= 25℃
Ta= 85℃
3
2
SPEC
1
0
0
0.4
0.8
1.2
1.6
0
0.4
OUTPUT HIGH CURRENT: IOH(mA)
1.2
1.6
OUTPUT HIGH CURRENT: IOH(mA)
Figure 9. Output High Voltage2 vs Output High Current
(Vcc=1.7V)
Figure 8. Output High Voltage1 vs Output High Current
(Vcc=2.7V)
1.2
1.2
SPEC
INPUT LEAKAGE CURRENT1 : ILI1(uA)
INPUT LEAKAGE CURRENT1 : ILI1(uA)
0.8
1
0.8
Ta=-40℃
Ta= 25℃
Ta= 85℃
0.6
0.4
0.2
0
SPEC
1
0.8
Ta=-40℃
Ta= 25℃
Ta= 85℃
0.6
0.4
0.2
0
0
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
Figure 11. Input Leakage Current1 (SK)
vs Supply Voltage
Figure 10. Input Leakage Current1 (CS)
vs Supply Voltage
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Datasheet
BR93G56-3B
Typical Performance Curves‐Continued
1.2
OUTPUT LEAKAGE CURRENT : ILO(uA)
INPUT LEAKAGE CURRENT1 : ILI1(uA)
1.2
SPEC
1
0.8
Ta=-40℃
Ta= 25℃
Ta= 85℃
0.6
0.4
0.2
SPEC
1
0.8
Ta=-40℃
Ta= 25℃
Ta= 85℃
0.6
0.4
0.2
0
0
0
1
2
3
4
5
0
6
1
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 13. Output Leakage Current (DO)
vs Supply Voltage
Figure 12. Input Leakage Current1 (DI)
vs Supply Voltage
5
SUPPLY CURRENT (WRITE) : ICC1(mA)
2.5
SUPPLY CURRENT (WRITE) : ICC1(mA)
2
Ta=-40℃
Ta= 25℃
Ta= 85℃
2
1.5
SPEC
1
0.5
Ta=-40℃
Ta= 25℃
Ta= 85℃
4
3
SPEC
2
1
0
0
0
1
2
3
4
5
0
6
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 15. Supply Current (WRITE) vs Supply Voltage
(fSK=3MHz)
Figure 14. Supply Current (WRITE) vs Supply Voltage
(fSK=1MHz)
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Datasheet
BR93G56-3B
Typical Performance Curves‐Continued
2.5
Ta=-40℃
Ta= 25℃
Ta= 85℃
2
1.5
1
SPEC
0.5
0
0
1
2
3
4
5
Ta=-40℃
Ta= 25℃
Ta= 85℃
2
SUPPLY CURRENT (READ) : I CC2(mA)
SUPPLY CURRENT (READ): I CC2(mA)
2.5
1.5
SPEC
1
0.5
0
0
6
1
2
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 16. Supply Current (READ) vs Supply Voltage
(fSK=1MHz).
Figure 17. Supply Current (READ) vs Supply Voltage
(fSK=3MHz)
5
2.5
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
2
SUPPLY CURRENT (WRAL): I CC3(mA)
SUPPLY CURRENT (WRAL) : I CC3(mA)
3
Ta=-40℃
Ta= 25℃
Ta= 85℃
1.5
1
0.5
0
0
1
2
3
4
5
6
SPEC
3
2
1
0
0
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 19. Supply Current (WRAL) vs Supply Voltage
(fSK=3MHz)
Figure 18. Supply Current (WRAL) vs Supply Voltage
(fSK=1MHz)
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Datasheet
BR93G56-3B
Typical Performance Curves‐Continued
1000
2.5
Ta=-40℃
Ta= 25℃
Ta= 85℃
100
2
SK FREQUENCY : fSK(MHz)
STANDBY CURRENT : I SB1(uA)
SPEC
Ta=-40℃
Ta= 25℃
Ta= 85℃
1.5
1
0.5
10
SPEC
1
0.1
0.01
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 20. Standby Current vs Supply Voltage
(CS=0V)
Figure 21. SK Frequency vs Supply Voltage
500
500
Ta=-40℃
Ta= 25℃
Ta= 85℃
400
SKLOW
LOWTIME
TIME: :tSKL
tSKL(ns)
(ns)
SK
400
SK HIGH
HIGH TIME
TIME :: tSKH
SK
SKH(ns)
SPEC
SPEC
300
SPEC
SPEC
200
SPEC
100
Ta=-40℃
Ta= 25℃
Ta= 85℃
300
SPEC
SPEC
200
SPEC
100
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 22. SK High Time vs Supply Voltage
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Figure 23. SK Low Time vs Supply Voltage
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BR93G56-3B
Typical Performance Curves‐Continued
50
500
Ta=-40℃
Ta= 25℃
Ta= 85℃
CS HOLD TIME : tCSH(ns)
CS LOW TIME : tCS(ns)
400
SPEC
0
300
SPEC
SPEC
200
100
-50
Ta=-40℃
Ta= 25℃
Ta= 85℃
-100
-150
-200
-250
-300
0
0
1
2
3
4
5
0
6
1
2
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 24. CS Low Time vs Supply Voltage
Figure 25. CS Hold Time vs Supply Voltage
150
300
250
SPEC
100
SPEC
DI SETUP TIME : tDIS(ns)
CS SETUP TIME : tCSS(ns)
3
200
Ta=-40℃
Ta= 25℃
Ta= 85℃
150
100
SPEC
50
Ta=-40℃
Ta= 25℃
Ta= 85℃
50
SPEC
0
-50
0
0
1
2
3
4
5
6
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 27. DI Setup Time vs Supply Voltage
Figure 26. CS Setup Time vs Supply Voltage
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Datasheet
BR93G56-3B
Typical Performance Curves‐Continued
150
DATA "0" OUTPUT DELAY : tPD0(ns)
1000
SPEC
DI HOLD TIME : tDIH(ns)
100
Ta=-40℃
Ta= 25℃
Ta= 85℃
SPEC
50
0
600
SPEC
400
SPEC
200
-50
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
SUPPLY VOLTAGE: Vcc(V)
Figure 28. DI Hold Time vs Supply Voltage
Figure 29. Data "0" Output Delay vs Supply Voltage
1000
500
TIME FROM CS TO OUTPUT ESTABLISHMENT :
tSV(ns)
DATA "1" OUTPUT DELAY : tPD1(ns)
Ta=-40℃
Ta= 25℃
Ta= 85℃
800
Ta=-40℃
Ta= 25℃
Ta= 85℃
800
SPEC
400
600
Ta=-40℃
Ta= 25℃
Ta= 85℃
300
SPEC
400
200
SPEC
200
SPEC
100
0
0
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
0
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
Figure 30. Data "1" Output Delay vs Supply Voltage
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Figure 31. Time from CS to Output Establishment
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BR93G56-3B
Typical Performance Curves‐Continued
6
SPEC
SPEC
5
200
WRITE CYCLE TIME : t E/W(ms)
TIME FROM CS TO HIGH-Z : t DF(ns)
250
Ta=-40℃
Ta= 25℃
Ta= 85℃
150
SPEC
100
50
0
4
3
Ta=-40℃
Ta= 25℃
Ta= 85℃
2
1
0
0
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
1
2
3
4
5
6
SUPPLY VOLTAGE: Vcc(V)
Figure 33. Write Cycle Time vs
Supply Voltage
Figure 32. Time from CS to High-Z
vs Supply Voltage
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Description of Operations
Communications of the MicroWire BUS are carried out by SK (serial clock), DI (serial data input), DO (serial data output),
and CS (chip select) for device selection.
When connecting one EEPROM to a microcontroller, connect it as shown in Figure 34(a) or Figure 34(b). And when using
the input and output common I/O port of the microcontroller, connect DI and DO of EEPROM via a resistor as shown in
Figure 34(b) (Refer to pages 21, 22.), wherein connection by 3 lines is possible.
In the case of connecting multiple EEPROM devices, refer to Figure 34 (c).
MicroController
SK
SK
SK
DO
DI
DI
DO
BR93GXX
CS
SK
DI/O
DI
DO
(a). Connection by 4 Lines
CS3
CS2
CS1
SK
DO
DI
(b). Connection by 3 Lines
CS
SK
DI
DO
CS
MicroController
CS
CS
SK
DI
DO
BR93GXX
CS
SK
DI
DO
MicroController
CS
Device 1
Device 2
Device 3
(c). Connection Example of Multiple Devices
Figure 34. Connection Method with Microcontroller
Communications on MicroWire BUS is started by the first “1” input after the rise of CS. This input is called the “Start Bit”.
After the start bit, the Ope code, address and data are the inputted sequentially. Address and data are all inputted with MSB
first.
“0” inputs from the rise of CS to the start bit input are all ignored. Therefore, when there is limitation in the bit width of PIO of
the microcontroller, input “0” before the start bit input, to control the bit width.
Command Mode
Address
Command
Read (READ)
(1)
Start
Bit
Ope
Code
1
10
BR93G56-3
MSB of Address(Am) is A7
A7,A6,A5,A4,A3,A2,A1,A0
Write Enable (WEN)
1
00
1
1
******
Write Disable (WDS)
1
00
0
0
******
1
01
1
00
Erase (ERASE)
1
11
Erase All (ERAL)
1
00
Write (WRITE)
(2)
Write All (WRAL)
(2)
A7,A6,A5,A4,A3,A2,A1,A0
0
1
******
A7,A6,A5,A4,A3,A2,A1,A0
1
0
******
Data
MSB of Data(Dx) is D15
D15 to D0(READ DATA)
Required Clocks(n)
BR93G56-3:n=27
BR93G56-3:n=11
D15 to D0(WRITE DATA)
D15 to D0(WRITE DATA)
BR93G56-3:n=27
BR93G56-3:n=11
A7 of BR93G56-3 becomes Don't Care.
・ Input the address and the data in MSB first manners.
・ As for *, input either “1” or “0” .
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The start bit means the first “1” input after the rise of CS.
(1)
As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are
sequentially output continuously. (Auto increment function)
(2) For write or write all commands, an internal erase or erase all is included and no separate erase or erase all is needed before write or write all command.
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Timing Chart
1. Read Cycle (READ)
～
～
～
～
～
～
CS
～
～
(1)
*1
2
4
*2
Am
0
A1
～
～
1
1
n+1
～
～
(2)
DI
n
～
～
1
～
～
SK
A0
～
～
～
～
(2)
*2
Am: MSB of address
Dx: MSB of data
n: required clocks
～
～
Dx-1
D1
D0
Dx
Dx-1
～
～
Dx
～
～
0
DO
High-Z
(1) Start bit
After the rising edge of CS, the first data “1” input will be recognized as the start bit and the following operation starts. All “0s” preceding the start bit
are ignored. This applies to all command that will be discussed later.
(2) For the meaning of Am,Dx,n,please see tables of command mode in Page15. For example, Am=A7,Dx=D15,n=27.
Figure 35. Read Cycle
(1) When the READ command is received, data is clocked out to DO synchronously with the rising edge of SK. A “0”
(dummy bit) is output first in sync with the address bit A0. Then follows the 16-bit data from the selected address
MSB first.
This IC has an Address Auto Increment function that is available only for READ command. After the first 16-bit data
has been output to DO and CS is kept high, a continuous SK clock input causes the address to increment
automatically and the IC outputs a stream of successive data from consecutive addresses.
2. Write Cycle (WRITE)
～
～
～
～
～
～
tCS
CS
～
～
A1
A0
Dx
Dx-1
D1
D0
～
～
Am
～
～
1
～
～
0
～
～
1
n
4
～
～
DI
2
～
～
1
～
～
～
～
SK
STATUS
Am: MSB of address
Dx: MSB of data
n: required clocks
tSV
BUSY READY
～
～
DO
High-Z
tE/W
For the meaning of Am,Dx,n, please see tables of command mode in Page15.
Figure 36. Write Cycle
(1) In this command, input 16bit data are written to designated addresses (Am to A0). The actual write starts by the fall
of CS of D0 taken SK clock.
When STATUS is not detected (CS=low fixed),make sure Max 5ms time is in comforming with tE/W.
When STATUS is detected (CS=high), all commands are not accepted for areas where low (BUSY) is output from
D0, therefore, do not input any command.
3. Write All Cycle (WRAL)
～
～
～
～
～
～
tCS
CS
1
Dx
Dx-1
D1
D0
Dx: MSB of data
n: required clocks
～
～
0
～
～
0
～
～
0
～
～
1
～
～
DI
n
5
～
～
2
～
～
1
～
～
～
～
SK
STATUS
～
～
～
～
tSV
BUSY READY
～
～
DO
High-Z
For the meaning of Dx,n,please see tables of command mode in Page15.
tE/W
Figure 37. Write All Cycle
(1) In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one
word but is written in bulk, the write time is only Max 5ms in conformity with tE/W.
In WRAL, STATUS can be detected in the same manner as in WRITE command.
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4. Write Enable (WEN) / Disable (WDS) Cycle
～
～
CS
2
1
3
4
5
6
7
8
1
0
0
～
～
DI
n: required clocks
n
～
～
ENABLE=1 1
DISABLE=0 0
～
～
SK
DO
High-Z
For the meaning of n,please see tables of command mode in Page15.
Figure 38. Write Enable (WEN) / Disable (WDS) C
(1) At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it
is necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write
disable command is executed or the power is turned off. However, the read command is valid irrespective of write
enable / diable command. Input to SK after 6 clocks of this command is available by either “1” or “0”, but be sure to
input it.
(2) When the write enable command is executed after power on, write enable status gets in. When the write disable
command is executed then, the IC gets in write disable status as same as at power on, and then the write command
is canceled thereafter in software manner. However, the read command is executable. In write enable status, even
when the write command is input by fault, write is started. To prevent such error, it is recommended to execute the
write disable command after completion of write.
5. Erase Cycle (ERASE)
～
～
～
～
STATUS
～
～
～
～
Am
A3
A2
A1
A0
～
～
1
～
～
1
～
～
tSV
～
～
BUSY READY
～
～
DO
Am: MSB of address
n: required clocks
～
～
1
～
～
DI
n
4
2
～
～
1
～
～
SK
～ ～
～
～
tCS
CS
High-Z
tE/W
For the meaning of Am,n,please see tables of command mode in Page15.
Figure 39. Erase Cycle
(1) In this command, data of the designated address is made into “1”. The data of the designated address becomes
“FFFFh”.
Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.
In ERASE, STATUS can be detected in the same manner as in WRITE command.
6. Erase All Cycle (ERAL)
0
tSV
～
～
1
～
～
0
～
～
0
～ ～
～
～
1
n
～
～
DI
4
～
～
2
STATUS
～
～
1
～
～
SK
n: required clocks
BUSY READY
～
～
DO
～
～
～
～
tCS
CS
High-Z
tE/W
For the meaning of n,please see tables of command mode in Page15.
Figure 40. Erase All Cycle
(1) In this command, data of all addresses is made into “1”. Data of all addresses becomes ”FFFFh”.
Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.
In ERAL, STATUS can be detected in the same manner as in WRAL command.
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Application
1. Method to cancel each command
(1) READ
Start bit
1bit
Address (1)
Ope code
Data (1)
2bit
m+1bit
Cancel is available in all areas in read mode.
(1) For the meaning of m,x, please see tables of Command Mode in Page15
x+1bit
・Method to cancel：cancel by CS=low
Figure 41. READ Cancel Available Timing
(2) WRITE,WRAL
Clock rise of D0 taken
n
n-1
SK
n+2
D0
A1
DI
n+1
a
D1
c
b
Enlarged figure
Start bit
1bit
Address (1)
Ope code
2bit
Data
m+1bit
tE/W
(1) For the meaning of m,n,x,
please see tables of Command Mode in Page15
x+1bit
a
c
b
a：From start bit to the clock rise of D0 taken
Cancel by CS=low
b：When taken after the clock rise of D0.
Cancellation will be no longer possible.
Note 1)
c：n+1 clock rise and after
Cancel by CS=low
However, when write is started in b area (CS is ended), cancellation is
not available by any means.
And when SK clock is output continuously cancel function is not
available.
If Vcc is turned OFF in this area, designated address data is not
guaranteed, therefore, it is recommended to execute WRITE
once again.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes uncertain. Therefore, it is
recommended to set CS to ”L” in SK=low area.
As for SK rise, recommended timing is tCSS/tCSH or higher.
Figure 42. WRITE, WRAL Cancel Available Timing
(3) ERASE, ERAL
Clock rise of A0 taken
n-1
SK
DI
n
n+2
n+1
A1
A0
a
b
c
Enlarged figure
Start bit
1bit
Ope code
2bit
Address
(1)
tE/W
(1) For the meaning of m,n,please see tables of Command Mode in Page15
m+1bit
a
a：From start bit to clock rise of A0 taken
Cancel by CS=low
b
c
b：Clock rise of A0 taken
Cancellation is not available by any means.
Note 1)
c：n+1 clock rise and after
Cancel by CS=low
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously cancel function is not available.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fall in SK=low area.
As for SK rise, recommended timing of tCSS/tCSH or higher.
If Vcc is made OFF in this area, designated address data is not
guaranteed, therefore write once again is suggested.
Figure 43. ERASE, ERAL Cancel Available Timing
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2. At Standby
When CS is low, even if SK, DI, DO are low, high or with middle electric potential, current does not exceed ISB1 Max
3. I/O Peripheral Circuit
(1) Pull down CS.
By making CS=low at power ON/OFF, mistake in operation and mistake write are prevented.
(a) Pull Down Resistance RCS of CS pin
To prevent mistake in operation and write error at power ON/OFF, CS pull down resistor is necessary. Select an
appropriate resistor value from microcontroller VOH, IOH, and VIL characteristics of this IC.
Rcs ≧
Microcontroller
VOHM
High output
VOHM ≧
EEPROM
Rcs
IOHM
・・・①
・・・②
VIHE
Example) When Vcc =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
from the equation ①,
VIHE
IOHM
VOHM
Rcs ≧
Low input
∴
Figure 44. CS Pull Down Resistance
2.4
2×10-3
Rcs ≧ 1.2 [kΩ]
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
・VIHE
・VOHM
・IOHM
: EEPROM VIH specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
(2) DO is available in both pull up and pull down.
DO output always is High-Z except in READY / BUSY STATUS and data output in read command.
When malfunction occurs at High-Z input of the microcontroller port connected to DO, it is necessary to pull down
and pull up DO. When there is no influence upon the microcontroller operations, DO may be left OPEN.
If DO is OPEN during transition of output from BUSY to READY status, and at an instance where CS=high,
SK=high, DI=high, EEPROM recognizes this as a start bit, resets READY output, and sets DO=High-Z. Therefore,
READY signal cannot be detected. To avoid such output, pull up DO pin for improvement.
CS High
CS
SK
SK
Enlarged
DI
D0
DI
High-Z
High-Z
READY
DO BUSY
DO
BUSY
CS=SK=DI=High
When DO=OPEN
Improvement by DO pull up
DO
READY
BUSY
CS=SK=DI=High
When DO=pull up
Figure 45. READY Output Timing at DO=OPEN
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(a) Pull Up Resistance RPU and Pull Down Resistance RPD of DO pin
As for pull up and pull down resistance value, select an appropriate resistor value from microcontroller VIH, VIL,
and VOH, IOH, VOL, IOL characteristics of this IC.
Microcontroller
Rpu ≧
EEPROM
Rpu
VOLE ≦ VILM
IOLE
VILM
Vcc－VOLE
IOLE
VOLE
・・・③
・・・④
Example) When Vcc =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
Low input
5－0.4
2.1×10-3
Rpu ≧ 2.2 [kΩ]
Rpu ≧
Low output
∴
With the value of Rpu to satisfy the above equation, VOLE becomes
0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied.
Figure 46. DO Pull Up Resistance
・VOLE
・IOLE
・VILM
VOHE
VIHM
High input
IOHE
High output
Rpd ≧
∴
Figure 47. DO Pull Down Resistance
・・・⑤
・・・⑥
Example) When Vcc =5V, VOHE=Vcc－0.2V, IOHE=0.1mA,
VIHM=Vcc×0.7V from the equation ⑤,
VOHE
Rpd
VOHE
IOHE
≧ VIHM
Rpd ≧
EEPROM
Microcontroller
: EEPROM VOL specifications
: EEPROM IOL specifications
: Microcontroller VIL specifications
5－0.2
0.1×10-3
Rpd ≧ 48 [kΩ]
With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V
or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
・VOHE
・IOHE
・VIHM
: EEPROM VOH specifications
: EEPROM IOH specifications
: Microcontroller VIH specifications
(b) READY / BUSY STATUS Display (DO terminal)
This display outputs the internal STATUS signal. When CS is started after tCS
from CS fall after write command input, high or low is output.
R/B display ＝low (BUSY) = write under execution
After the timer circuit in the IC works and creates the period of tE/W, this timer circuit completes automatically.
And the memory cell is written in the period of tE/W, and during this period, other command is not accepted.
（DO STATUS）
R/B display = high (READY) = command wait STATUS
After tE/W (Max5ms) the following command is accepted.
Therefore, CS=high in the period of tE/W , and If signals are input in SK, DI, malfunction may occur,
therefore, DI=low in the area
CS=high. (Especially, in the case of shared input port, attention is required.)
（DO STATUS）
*Do not input any command while STATUS signal is active. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, STATUS READY output is cancelled, and malfunction and mistake write may occur.
CS
STATUS
SK
CLOCK
DI
DO
WRITE
INSTRUCTION
High-Z
tSV
READY
BUSY
tE/W
Figure 48. READY/BUSY STATUS Output Timing Chart
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4. When to Directly Connect DI and DO
This IC has independent input terminal DI and output terminal DO, wherein signals are handled separately on timing chart.
But, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by a single control
line.
Microcontroller
EEPROM
DI/O PORT
DI
R
DO
Figure 49. DI, DO control line common connection
(a) Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input of EEPROM.
Drive from the microcontroller DI/O output to DI input of EEPROM on I/O timing, and output signal from DO
output of EEPROM occur at the same time in the following points.
(1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
EEPROM CS input
High
(1) X=15,for the meaning of x ,
please see tables of command mode in Page15.
EEPROM SK input
A1
EEPROM DI input
A0
EEPROM DO output
0
High-Z
Microcontroller DI/O port
A1
Collision of DI input and DO output
(1)
Dx-1 Dx-2
Dx
A0
Microcontroller output
High-Z
Microcontroller input
Figure 50. Collision Timing at Read Data Output at DI, DO Direct Connection
(2) Timing of CS = high after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, HIGH-Z gets in.
→Especially, at command input after write, when CS input is started with microcontroller DI/O output low,
READY output high is output from DO terminal, and through current route occurs.
Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.
～
～
EEPROM SK input
Write command
EEPROM DI input
Write command
EEPROM DO output
Write command
～
～
Write command
～
～
EEPROM CS input
～
～
～
～
～
～
READY
～
～
～
～
BUSY
High-Z
READY
Collision of DI input and DO output
BUSY
Microcontroller output
Microcontroller input
～
～
READY
Write command
～
～
Microcontroller DI/O port
Microcontroller output
Figure 51. Collision Timing at DI, DO Direct Connection
Note) As for the case (2), attention must be paid to the following.
When STATUS READY is active, DO and DI are shared, DI=high and the microcontroller DI/O=High-Z or the microcontroller DI/O=high,if SK clock
is input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at STATUS READY
output, set SK=low, or start CS within 4 clocks after high of READY signal is output.
Start bit
CS
Because DI=high, set
SK=low at CS rise.
SK
DI
READY
DO
High-Z
Figure.52 Start Bit Input Timing at DI, DO Direct Connection
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(a) Selection of Resistance Value R
The resistance R becomes a short-circuit current limiting resistance during signal conflicts and it does not affect
the basic operations of the device. When short-circuit current flows, glitches in the power source lines may be
produced. Determine the maximum transient current in the power lines wherein glitches are not produced.
Select the value of resistance R that will satisfy the EEPROM input level VIH/VIL, even under the influence of
voltage fluctuations resulting from short-circuit current and so forth. Assuming the allowable short-circuit
current defined as I, the following relation should be satisfied.
(3) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is high, EEPROM DO outputs low, and high is input to DI)
(a) Make the through current to EEPROM 10mA or below.
(b) See to it that the level VIH of EEPROM should satisfy the following.
Conditions
Microcontroller
VIHE ≦ IOHM×R + VOLE
EEPROM
DI/O PORT
At this moment, if VOLE=0V,
DI
VOHM
High output
IOHM
∴
R
DO
・VIHE
・VOLE
・IOHM
VOLE
Low outpu
VIHE ≦ IOHM×R
VIHE
R ≧
IOHM
・・・⑦
: EEPROM VIH specifications
: EEPROM VOL specifications
: Microcontroller IOH specifications
Figure 53. Circuit at DI, DO Direct Connection (Microcontroller DI/O high Output, EEPROM low Output)
(4) DO STATUS READY Output Timing
(When the microcontroller DI/O is low, EEPROM DO output high, and low is input to DI)
(a) Set the EEPROM input level VIL so as to satisfy the following.
Conditions
Microcontroller
Low output
EEPROM
DI/O PORT
VILE ≧ VOHE – IOLM×R
DI
As this moment, VOHE=VCC
VOLM
VILE ≧ Vcc – IOLM×R
IOLM
R
∴
DO
VOHE
・VILE
・VOHE
・IOLM
High output
R ≧
Vcc – VILE
IOLM
・・・⑧
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller IOL specifications
Example) When VCC=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,
From the equation ⑦,
R ≧
R ≧
∴
From the equation⑧,
VIHE
R ≧
IOHM
3.5
R ≧
0.4×10-3
R ≧ 8.75 [kΩ]
・・・⑨
∴
Vcc – VILE
IOLM
5 – 1.5
2.1×10-3
R ≧ 1.67 [kΩ]
・・・⑩
Therefore, from the equations ⑨ and ⑩,
∴
R ≧ 8.75 [kΩ]
Figure 54. Circuit at DI, DO Direct Connection (Microcontroller DI/O low output, EEPROM high output)
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5. I/O Equivalence Circuit
Output Circuit
Input Circuit
RESET int.
DO
CSint.
CS
OEint.
Figure 56. Input Circuit (CS)
Figure 55. Output Circuit (DO)
Input Circuit
Input Circuit
CS int.
CS int.
SK
DI
Figure 57. Input Circuit (DI)
Figure 58. Input Circuit (SK)
6. Power-Up/Down Conditions
(1) At Power ON/OFF, set CS low.
When CS is high, this IC gets in input accept status (active). At power ON, set CS low to prevent malfunction and
write error from noise (When CS is in low status, all inputs are cancelled.). At power decline, low power status may
prevail.
Therefore, at power OFF, set CS low to prevent malfunction from noise.
VCC
VCC
GND
VCC
CS
GND
Bad example
Good example
Figure 59. Timing at Power ON/OFF
（Bad example）CS pin is pulled up to Vcc
（Good example）It is low at power ON/OFF.
When IC is turned ON while CS is high, EEPROM malfunction write error may occur
due to noise and the likes.
It’s also possible to happen even when CS input is High-Z.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset, so please note.
(2) POR Circuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR operation, it gets in
write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF.
However, if CS is high at power ON/OFF, it may become write enable status owing to noises and the likes. For
secure operations, observe the follwing conditions.
(a) Set CS=low
(b) Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit operation.
Recommended conditions of tR, tOFF, Vbot
tR
VCC
tOFF
Vbot
tR
tOFF
Vbot
10ms or below
10ms or higher
0.3V or below
100ms or below
10ms or higher
0.2V or below
0
Figure 60. Rise Waveform Diagram
(3) LVCC Circuit
LVCC (VCC-Lockout) circuit prevents data rewrite operation at low power, and prevents wrong write.
At LVCC voltage (Typ=1.2V) or below, it prevent data rewrite
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7. Noise Countermeasures
(1) VCC Noise (Bypass Capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to connect a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, connect the
capacitor as close to IC as possible.And, it is also recommended to connect a bypass capacitor between board’s
VCC and GND.
(2) SK Noise
When the rise time of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to
clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit
is set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set
the rise time of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise
countermeasures. Make the clock rise, fall time as small as possible.
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Operational Notes
1.
Described numeric values and data are design representative values only, and the values are not guaranteed.
2.
We believe that application circuit examples are recommendable. However, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin
in consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.
3.
Absolute maximum ratings
If the absolute maximum ratings such as supply voltage and operating temperature and so forth are exceeded, LSI may
be destructed. Do not supply voltage and temperature exceeding the absolute maximum ratings. In the case of fear
exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be supplied to LSI.
4.
GND electric potential
Set the voltage of GND terminal lowest at any operating condition. Make sure that each terminal voltage is not lower
than that of GND terminal at any time, even during transient condition.
5.
Thermal design
Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in
actual operating conditions.
6.
Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
7.
Operating the IC in the presence of strong electromagnetic field may cause malfunction, therefore, evaluate design
sufficiently.
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Datasheet
BR93G56-3B
Part Numbering
B
R
9
3
G
5
6
x
x
x
－
3
x
x
x
BUS Type
93：MicroWire
Operating Temperature
/ Operating Voltage
-40℃ to +85℃/ 1.7V to 5.5V
Capacity
56=2K
Package
Blank
:DIP-T8
F
FJ
:SOP8
:SOP-J8
FV
:SSOP-B8
FVT
FVJ
FVM
NUX
:TSSOP-B8
:TSSOP-B8J
:MSOP8
:VSON008X2030
Process Code
Pin Assignment
Blank: Pin1 to 8: CS, SK, DI, DO, GND, ORG, DU, VCC respectively
A
: Pin1 to 8: CS, SK, DI, DO, GND, NC, DU, VCC respectively
B
: Pin1 to 8: DU, VCC, CS, SK, DI, DO, GND, NC respectively
Packaging and Forming Specification
E2
: Embossed tape and reel
(SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)
TR
: Embossed tape and reel
(MSOP8, VSON008X2030)
Blank : Tube
(DIP-T8)
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BR93G56-3B
Physical Dimensions Tape and Reel Information
DIP-T8
9.3±0.3
5
1
4
3.2±0.2 3.4±0.3
0.51Min.
6.5±0.3
8
7.62
0.3±0.1
2.54
0°−15°
0.5±0.1
(Unit : mm)
<Tape and Reel information>
Container
Tube
Quantity
2000pcs
Direction of feed
Direction of products is fixed in a container tube
∗ Order quantity needs to be multiple of the minimum quantity.
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BR93G56-3B
SOP8
6
5
1 2
3
4
0.3MIN
7
4.4±0.2
6.2±0.3
8
+6°
4° −4°
0.9±0.15
5.0±0.2
(MAX 5.35 include BURR)
0.595
1.5±0.1
+0.1
0.17 -0.05
S
S
0.11
0.1
1.27
0.42±0.1
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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BR93G56-3B
SOP-J8
4.9±0.2
(MAX 5.25 include BURR)
7
6
5
1
2
3
4
0.45MIN
8
3.9±0.2
6.0±0.3
+6°
4° −4°
0.545
0.2±0.1
1.375±0.1
S
0.175
1.27
0.42±0.1
0.1 S
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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BR93G56-3B
SSOP-B8
3.0±0.2
(MAX 3.35 include BURR)
7
6
5
1
2
3
4
0.1
1.15±0.1
0.3MIN
6.4 ± 0.3
4.4 ± 0.2
8
0.15±0.1
S
(0.52)
0.65
0.1 S
+0.06
0.22 −0.04
0.08
M
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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BR93G56-3B
TSSOP-B8
3.0±0.1
(MAX 3.35 include BURR)
7
6
5
1
2
3
4
4±4
1.0±0.2
0.5 ± 0.15
1PIN MARK
0.525
+0.05
0.145 −0.03
S
0.1 ± 0.05
1.0 ± 0.05
1.2MAX
6.4 ± 0.2
4.4 ± 0.1
8
0.08 S
+0.05
0.245 −0.04
0.08
M
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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BR93G56-3B
TSSOP-B8J
6
5
1
2
3
4
4±4
0.45 ± 0.15
1PIN MARK
0.95 ± 0.2
7
3.0 ± 0.1
8
+0.05
0.145 −0.03
0.525
S
0.1±0.05
0.85±0.05
1.1MAX
4.9± 0.2
3.0±0.1
(MAX 3.35 include BURR)
0.08 S
+0.05
0.32 −0.04
0.08
M
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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BR93G56-3B
MSOP8
4.0±0.2
2.8±0.1
8 7 6 5
0.6±0.2
+6°
4° −4°
0.29±0.15
2.9±0.1
(MAX 3.25 include BURR)
1 2 3 4
1PIN MARK
+0.05
0.145 −0.03
0.475
0.08±0.05
0.75±0.05
0.9MAX
S
+0.05
0.22 −0.04
0.08 S
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1pin
Direction of feed
Reel
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BR93G56-3B
VSON008X2030
3.0±0.1
2.0±0.1
0.6MAX
1PIN MARK
1.5±0.1
0.5
1
4
8
5
0.25
1.4±0.1
0.3±0.1
C0.25
(0.12)
0.08 S
+0.03
0.02 −0.02
S
+0.05
0.25 −0.04
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
4000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
1pin
Reel
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Datasheet
BR93G56-3B
Marking Diagrams
SOP8(TOP VIEW)
DIP-T8 (TOP VIEW)
Part Number Marking
Part Number Marking
BR93G56B
9 G 5 6 B
LOT Number
LOT Number
1PIN MARK
SOP-J8(TOP VIEW)
SSOP-B8(TOP VIEW)
Part Number Marking
Part Number Marking
9GBB
9 G 5 6 B
LOT Number
LOT Number
1PIN MARK
1PIN MARK
TSSOP-B8(TOP VIEW)
TSSOP-B8J(TOP VIEW)
Part Number Marking
9G56B
Part Number Marking
9 G 5
LOT Number
LOT Number
6 B 3
1PIN MARK
1PIN MARK
MSOP8(TOP VIEW)
VSON008X2030 (TOP VIEW)
Part Number Marking
Part Number Marking
9 G B
B G 3
9 G 5
LOT Number
LOT Number
6 B 3
1PIN MARK
1PIN MARK
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Revision History
Date
Revision
Changes
23.Aug. 2012
001
New Release
27.Feb.2013
002
Update some English words, sentences’ descriptions, grammar and formatting.
Delete “Status of this document” in page 25.
Delete “Lineup” after “Part numbering “ in page26.
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001