GSD2004W-V

GSD2004W-V
225mA Surface Mount Small Signal Fast Switching Diode
Features
· Silicon Epitaxial Planar Diode
C
H
· Fast switching diode,especially suited for
applications requiring high voltage capa- bility
A
B
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
K
M
L
Mechanical Data
· Case: SOD123 plastic case
SOD-123
Dim
Min
Max
A
0.55 Typ
B
1.40
1.70
C
3.55
3.85
H
2.55
2.85
J
0.00
0.10
K
1.00
1.35
L
0.25
0.40
M
0.10
0.15
0
8°
α
All Dimensions in mm
· Weight: approx. 9.3 mg
· Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Maximum Ratings and Electrical Characteristics
Parameter
Test condition
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
VR
240
V
VRRM
300
V
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
IF
225
mA
IFRM
625
mA
tp = 1 μs
IFSM
4.0
A
tp = 1 s
IFSM
1.0
A
Ptot
350
mW
Peak repetitive forward current
Non-repetitive peak forward
current
Power dissipation
Symbol
Min
Reverse breakdown voltage
Parameter
IR = 100 μA
Test condition
VBR
300
Leakage current
VR = 240 V
IR
VR = 240 V, Tj = 150 °C
IR
IF = 20 mA
VF
IF = 100 mA
Diode capacitance
VF = VR = 0, f = 1 MHz
Reverse recovery time
IF = IR = 30 mA, Irr = 3.0 mA,
RL = 100 Ω
Forward voltage
1 of 1
Typ.
Max
Unit
100
nA
100
μA
V
0.83
0.87
V
VF
1.00
V
Ctot
5.0
pF
trr
50
ns