BAS33/BAS34 200mA Axial Leaded Small Signal Switching Diodes Features · Silicon planar diodes · Very low reverse current · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC B A A C D DO-35 Mechanical Data Dim Min A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 · Case: DO35 glass case · Weight: approx. 125 mg · Cathode band color: black · Packaging codes/options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per ammopack (52 mm tape), 50 k/box All Dimensions in mm Maximum Ratings and Electrical Characteristics Parameter Test condition Reverse voltage Peak forward surge current Forward continuous current Parameter @ TA = 25°C unless otherwise specified Part Symbol Value Unit BAS33 VR 30 V BAS34 VR 60 V IFSM 2 A tp = 1 µs IF Test condition Part Symbol Forward voltage IF = 100 mA VF Reverse current E ≤ 300 lx, VR IR E ≤ 300 lx, VR, Tj = 125 °C Breakdown voltage Diode capacitance Max Min 200 Typ. 1 Max mA Unit 1000 mV 3 nA 0.5 μA E ≤ 300 lx, VR = 15V BAS33 IR 0.5 1 nA E ≤ 300 lx, VR = 30 V BAS34 IR 0.5 1 nA IR = 5 µA, tp/T = 0.01, tp = 0.3 ms BAS33 V(BR) 40 V BAS34 V(BR) 70 V IR VR = 0, f = 1 MHz CD 1 of 2 3 pF Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 10000 I F - Forward Current (mA) I R - Reverse Current (nA) V R = VRRM 1000 Scattering Limit 100 10 Scattering Limit 10 1 0.1 1 0 94 9079 Tj = 25 °C 100 40 80 120 160 0 200 Tj - Junction Temperature (°C) Figure 1. Reverse Current vs. Junction Temperature 94 9078 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage 2of2