BAW27 300mA Axial Leaded Smalll Sighal Switching Diode Features · Silicon Epitaxial Planar Diode B A · Low forward voltage drop · High forward current capability · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C D Mechanical Data DO-35 · Case: DO35 Glass case · Weight: approx. 125 mg · Cathode Band Color: black · Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Dim Min A 25.40 Max ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Test condition Symbol Value Unit VRRM 75 V VR 60 V tp = 1 µs IFSM 4 A IF 600 mA Average forward current VR = 0 IFAV 300 mA Power dissipation l = 4 mm, TL = 45 °C Ptot 440 mW l = 4 mm, TL ≤ 25 °C Ptot 500 Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward continuous current Parameter Forward voltage Reverse current Test condition Symbol Min mW Typ. Max Unit 750 mV IF = 10 mA VF 670 IF = 50 mA VF 800 850 mV IF = 200 mA VF 950 1000 mV IF = 400 mA VF 1120 1250 mV VR = 60 V IR 100 nA VR = 60 V, Tj = 100 °C IR 50 µA Breakdown voltage IR = 5 µA, tp/T = 0.01, tp = 0.3 ms V(BR) Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD 4 pF Reverse recovery time IF = IR = 10 to 100 mA, iR = 0.1 x IR trr 6 ns 1of1 75 V