GSD2004W-V Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Fast switching diode, especially suited for e3 applications requiring high voltage capability • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part GSD2004W-V Ordering code Marking GSD2004W-V-GS18 or GSD2004W-V-GS08 Remarks B6 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Continuous reverse voltage Peak repetitive reverse voltage Forward current (continuous) Peak repetitive forward current Non-repetitive peak forward current Symbol Value Unit VR 240 V VRRM 300 V IF 225 mA IFRM 625 mA tp = 1 μs IFSM 4.0 A tp = 1 s IFSM 1.0 A Ptot 350 mW Symbol Value Unit RthJA 357 °C/W Power dissipation Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Typical thermal resistance junction to ambient air Test condition Junction temperature Tj 150 °C Storage temperature range TS - 65 to + 150 °C Document Number 85729 Rev. 1.5, 03-Jan-06 www.vishay.com 1 GSD2004W-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Symbol Min Reverse breakdown voltage Parameter IR = 100 μA Test condition VBR 300 Leakage current VR = 240 V IR Typ. Max Unit 100 nA 100 μA 0.87 V V VR = 240 V, Tj = 150 °C IR Forward voltage IF = 20 mA VF IF = 100 mA VF 1.00 V Diode capacitance VF = VR = 0, f = 1 MHz Ctot 5.0 pF Reverse recovery time IF = IR = 30 mA, Irr = 3.0 mA, RL = 100 Ω trr 50 ns 0.83 Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.55 (0.022) 0.15 (0.006) max. Mounting Pad Layout Cathode Band 2.40 (0.094) 2.55 (0.100) 2.85 (0.112) 3.55 (0.140) 3.85 (0.152) ISO Method E 1.40 (0.055) 1.70 (0.067) 0.72 (0.028) 17432 1.40 (0.055) www.vishay.com 2 Document Number 85729 Rev. 1.5, 03-Jan-06 GSD2004W-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85729 Rev. 1.5, 03-Jan-06 www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1