BAS85 200mA Surface Mount Schottky Barrier Diode Features · For general purpose applications · This diode features low turn-on voltage · The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges · This diode is also available in a DO35 case with type designation BAT85 · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C B A SOD-80 Mechanical Data · Case:SOD-80 Glass case · Weight: approx. 31 mg · Cathode Band Color: black · Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Max 3.30 3.70 B 1.30 1.60 C 0.28 0.50 Test condition @ TA = 25°C unless otherwise specified Symbol Value VR 30 Continuous reverse voltage Forward continuous current Tamb = 25 °C IF Peak forward current Tamb = 25 °C IFM Surge forward current tp < 1 s, Tamb = 25 °C IFSM Power dissipation Tamb = 65 °C Ptot Parameter Min A All Dimensions in mm Maximum Ratings and Electrical Characteristics Parameter Dim Test condition Min V(BR)R 30 V 1) mA 3001) mA 600 1) mA 200 1) 200 Symbol Unit Typ. mW Max Unit Reverse breakdown voltage IR = 10 µA (pulsed) Leakage current VR = 25 V IR 2 µA Forward voltage Pulse test tp < 300 µs, IF = 0.1 mA VF 240 mV Pulse test tp < 300 µs, IF = 1 mA VF 320 mV Pulse test tp < 300 µs, IF = 10 mA VF 400 mV Pulse test tp < 300 µs, IF = 30 mA VF Pulse test tp < 300 µs, IF = 100 mA VF 800 mV Diode capacitance VR = 1 V, f = 1 MHz Ctot 10 pF Reverse recovery time IF = 10 mA, IR = 10 mA, Irr = 1 mA, trr 5 ns 1) Valid provided that electrodes are kept at ambient temperature. 1 of 2 V 0.2 500 mV VR = 30 V 160 140 RthJA = 540 kW 120 PR - Limit at 100 % VR 100 80 PR - Limit at 80 % VR 60 40 VR = VRRM IR - Reverse Current (µA) PR - Reverse Power Dissipation (mW) 1000 200 180 100 10 20 1 0 25 50 75 100 125 25 150 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 75 100 125 150 Figure 2. Reverse Current vs. Junction Temperature 10 1000 CD - Diode Capacitance (pF) Tj = 150 °C IF - Forward Current (A) 50 Tj - Junction Temperature (°C) 15823 Tj - Junction Temperature (°C) 15822 100 Tj = 25 °C 10 1 f = 1 MHz 9 8 7 6 5 4 3 2 1 0 0.1 0 15824 0.5 1.0 0.1 1.5 15825 VF - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage 2 of 2