2SD2657K Transistors Low frequency amplifier 2SD2657K !External dimensions (Units : mm) !Features 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) !Application Low frequency amplifier Driver 1.6 1.1 0~0.1 0.8 0.15 2.8 0.3Min. Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Limits 30 30 6 1.5 3 200 150 −55~+150 (1) Emitter (2) Base (3) Collector !Packaging specifications !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Abbreviated symbol : FZ Unit V V V A A∗ mW °C °C Package Type Taping Code T146 Basic ordering unit (pieces) 3000 2SD2657K ∗Single pulse, PW=1ms !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 160 − 330 11 Max. − − − 100 100 350 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=1A, IB=50mA VCE=2V, IC=100mA ∗ VCE=2V, IE=−100mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz ∗ Pulsed 1/2 2SD2657K Transistors DC CURRENT GAIN : hFE Ta=25°C Ta=−40°C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current VCE=2V Pulsed Ta=100°C 0.1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 Ta=25°C Ta=−40°C 0.01 0.001 0 0.5 1 10 =20/1 IC/IB=20 Pulsed VBE(sat) 1 0.1 Ta=100°C VCE(sat) 0.01 0.001 0.01 100 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=5V f=100MHz tstg 100 tf tdon 10 tr 0.1 1 1 0.01 10 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Switching time 10 COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Cob 10 0.1 1000 Ta=25°C VCE=2V f=100MHz Fig.5 Gain bandwidth product vs. emitter current Cib Pulsed 1000 EMITTER CURRENT : IE (A) Ta=25°C IC=0A f=1MHz 10 10 Ta=25°C Fig.3 Collector-emitter saturation voltage vs. collector current 1000 1 1 1 Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.4 Grounded emitter propagation characteristics 1 0.1 0.1 COLLECTOR CURRENT : IC (A) BASE TO EMITTER CURRENT : VBE (V) 100 Ta=25°C Ta=−40°C 10 0.01 1.5 Ta=−40°C Ta=25°C Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V Pulsed Ta=100°C SWITCHING TIME : (ns) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) !Electrical characteristic curves 1m s 1 10 PW =1 0 ms 0.1 DC 0m s Op era tio n 0.01 Ta=25°C Single Pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe Operating Area 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0