EMB2 / UMB2N / IMB2A Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A zExternal dimensions (Units : mm) 0.5 0.5 1.0 1.6 0.22 EMB2 (3) (4) (5) (2) (6) (1) 1.2 1.6 0.5 0.13 zFeatures 1) Two DTA144E chips in a EMT or UMT or SMT package. 2) Same size as EMT3 or UMT3 or SMT3 package, so same mounting machine can be used for both. 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions ROHM : EMT6 zStructure Epitaxial planar type PNP silicon transistor (Built-in resistor type) Abbreviated symbol : B2 1.3 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 IMB2A (4) (5) (6) R1 R2 (1) 0.95 0.95 1.9 2.9 R2=47kΩ (1) (4) (6) (5) R1=47kΩ R2 R1 (3) (2) (2) DTr2 (6) DTr1 DTr2 IMB2A DTr1 (3) (3) (2) (1) R1 R2 Abbreviated symbol : B2 0.3 EMB2 / UMB2N R2 R1 (4) (5) 0.9 0.7 0to0.1 zEquivalent circuit R2=47kΩ 0.65 (1) (6) 0.15 2.1 0.1Min. R1=47kΩ 2.0 (3) (2) (4) (5) 0.2 1.25 The following characteristics apply to both DTr1 and DTr2. 0.65 UMB2N 1.6 0.3to0.6 Symbol Limits Unit Supply voltage VCC −50 V Input voltage VIN Parameter −40 10 Output current IO −30 IC (Max.) −100 150 (TOTAL) mA Pd Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C mW 300 (TOTAL) ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 1.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 V EMB2, UMB2N Power dissipation IMB2A 0to0.1 zAbsolute maximum ratings (Ta = 25°C) 0.8 0.15 2.8 ∗1 ∗2 Abbreviated symbol : B2 EMB2 / UMB2N / IMB2A Transistors zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.5 VI (on) −3 − − VO (on) − −0.1 −0.3 V II − − −0.18 mA Input voltage Output voltage Input current Unit Conditions VCC=−5V, IO=−100µA V VO=−0.3V, IO=−2mA IO/II=−10mA/−0.5mA VI=−5V IO (off) − − −0.5 µA VCC=−50V, VI=0V DC current gain GI 68 − − − VO=−5V, IO=−5mA Transition frequency fT − 250 − MHz Input resistance R1 32.9 47 61.1 kΩ − Resistance ratio R2 / R 1 0.8 1 1.2 − − Output current ∗ VCE=−10mA, IE=5mA, f=100MHZ ∗ Transition frequency of the device zPackaging specifications Package Type Taping Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 EMB2 UMB2N IMB2A zElectrical characteristic curves −10m VO=−0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −20 −10 −5 Ta=−40˚C 25˚C 100˚C −2 −1 −500m −200m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) −1 lO/lI =20 OUTPUT VOLTAGE : VO (on) (V) −500m Ta=100˚C 25˚C −40˚C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current VO=−5V 500 −2m −1m −500µ Ta=100˚C 25˚C −40˚C −200µ −100µ −50µ −20µ −10µ 200 100 Ta=100˚C 25˚C −40˚C 50 20 10 5 −5µ 2 −2µ −100m −100µ −200µ −500µ −1m −200m 1k VCC=−5V −5m −50 DC CURRENT GAIN : GI −100 1 −1µ 0 −0.5 −1 −1.5 −2 −2.5 −3 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current