ROHM UMB2N

EMB2 / UMB2N / IMB2A
Transistors
General purpose
(dual digital transistors)
EMB2 / UMB2N / IMB2A
zExternal dimensions (Units : mm)
0.5 0.5
1.0
1.6
0.22
EMB2
(3)
(4)
(5)
(2)
(6)
(1)
1.2
1.6
0.5
0.13
zFeatures
1) Two DTA144E chips in a EMT or UMT or SMT
package.
2) Same size as EMT3 or UMT3 or SMT3 package, so
same mounting machine can be used for both.
3) Transistor elements are independent, eliminating
interference.
Each lead has same dimensions
ROHM : EMT6
zStructure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
Abbreviated symbol : B2
1.3
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
IMB2A
(4) (5) (6)
R1 R2
(1)
0.95 0.95
1.9
2.9
R2=47kΩ
(1)
(4)
(6)
(5)
R1=47kΩ
R2 R1
(3) (2)
(2)
DTr2
(6)
DTr1
DTr2
IMB2A
DTr1
(3)
(3) (2) (1)
R1 R2
Abbreviated symbol : B2
0.3
EMB2 / UMB2N
R2 R1
(4) (5)
0.9
0.7
0to0.1
zEquivalent circuit
R2=47kΩ
0.65
(1)
(6)
0.15
2.1
0.1Min.
R1=47kΩ
2.0
(3)
(2)
(4)
(5)
0.2
1.25
The following characteristics apply to both DTr1 and
DTr2.
0.65
UMB2N
1.6
0.3to0.6
Symbol
Limits
Unit
Supply voltage
VCC
−50
V
Input voltage
VIN
Parameter
−40
10
Output current
IO
−30
IC (Max.)
−100
150 (TOTAL)
mA
Pd
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55∼+150
˚C
mW
300 (TOTAL)
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
1.1
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
V
EMB2, UMB2N
Power
dissipation IMB2A
0to0.1
zAbsolute maximum ratings (Ta = 25°C)
0.8
0.15
2.8
∗1
∗2
Abbreviated symbol : B2
EMB2 / UMB2N / IMB2A
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
VI (off)
−
−
−0.5
VI (on)
−3
−
−
VO (on)
−
−0.1
−0.3
V
II
−
−
−0.18
mA
Input voltage
Output voltage
Input current
Unit
Conditions
VCC=−5V, IO=−100µA
V
VO=−0.3V, IO=−2mA
IO/II=−10mA/−0.5mA
VI=−5V
IO (off)
−
−
−0.5
µA
VCC=−50V, VI=0V
DC current gain
GI
68
−
−
−
VO=−5V, IO=−5mA
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
32.9
47
61.1
kΩ
−
Resistance ratio
R2 / R 1
0.8
1
1.2
−
−
Output current
∗
VCE=−10mA, IE=5mA, f=100MHZ ∗
Transition frequency of the device
zPackaging specifications
Package
Type
Taping
Code
T2R
TR
T148
Basic ordering
unit (pieces)
8000
3000
3000
EMB2
UMB2N
IMB2A
zElectrical characteristic curves
−10m
VO=−0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
−20
−10
−5
Ta=−40˚C
25˚C
100˚C
−2
−1
−500m
−200m
−2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
−1
lO/lI =20
OUTPUT VOLTAGE : VO (on) (V)
−500m
Ta=100˚C
25˚C
−40˚C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
VO=−5V
500
−2m
−1m
−500µ
Ta=100˚C
25˚C
−40˚C
−200µ
−100µ
−50µ
−20µ
−10µ
200
100
Ta=100˚C
25˚C
−40˚C
50
20
10
5
−5µ
2
−2µ
−100m
−100µ −200µ −500µ −1m
−200m
1k
VCC=−5V
−5m
−50
DC CURRENT GAIN : GI
−100
1
−1µ
0
−0.5
−1
−1.5
−2
−2.5
−3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current