SSFM2506
Main Product Characteristics:
VDSS
25V
RDS(on)
4.1mohm(typ.)
ID
60A
TO-252 (D-PAK)
Marking and pin
Schematic diagram
Assignment
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely
low on resistance, fast switching speed and short reverse recovery time. These features combine to make this
design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other
applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V ①
60
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V ①
50
IDM
Pulsed Drain Current②
130
ISM
Pulsed Source Current (Body Diode)②
130
PD @TC = 25°C
Power Dissipation③
45
W
PD @TC =100°C
Power Dissipation③
22
W
VDS
Drain-Source Voltage
25
V
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak diode recovery voltage
1.5
V/nS
EAS
Single Pulse Avalanche Energy @ L=0.1mH②
90
EAR
Repetitive avalanche energy
228
IAR
Avalanche Current @ L=0.1mH②
42
A
-55 to + 175
°C
TJ
TSTG
Operating Junction and
©Silikron Semiconductor CO.,LTD.
Storage Temperature Range
2011.02.25
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Version : 1.2
A
mJ
page 1 of 9
SSFM2506
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Value
Unit
Junction-to-case③
2.5
℃/W
Junction-to-ambient (t ≤ 10s) ④
13
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
36
℃/W
Electrical Characterizes @T A=25℃ unless otherwise specified
Symbol
BVDSS
Parameter
Drain-to-Source breakdown
voltage
Min.
Typ.
Max.
Units
25
—
—
V
—
4.1
6
Conditions
VGS = 0V, ID = 250μA
VGS=10V
RDS(on)
Static Drain-to-Source
mΩ
on-resistance
—
6.5
—
1.2
1.9
2.5
ID = 30A
TJ = 125℃
VDS = VGS,
VGS(th)
IDSS
Gate threshold voltage
Drain-to-Source leakage
current
Gate-to-Source forward
IGSS
leakage
Gate-to-Source reverse
leakage
V
—
1.2
—
—
—
10
—
50
—
—
100
-100
—
—
Total gate charge
—
35.8
40
Qgs
Gate-to-Source charge
—
3.8
6
—
13.1
15
Qgd
charge
td(on)
Turn-on delay time
—
10.5
—
tr
Rise time
—
65.7
—
td(off)
Turn-Off delay time
—
27.0
—
tf
Fall time
—
8.2
—
Ciss
Input capacitance
—
1732
—
Coss
Output capacitance
—
512
—
—
323
—
—
1.4
—
Crss
Rg
Reverse transfer
capacitance
Gate resistance
©Silikron Semiconductor CO.,LTD.
VDS = 25V,
VGS = 0V
VDS = 25V, VGS = 0V,
TJ = 55°C
VGS =20V
nA
Qg
Gate-to-Drain("Miller")
TJ = 125℃
μA
—
ID = 250μA
2011.02.25
www.silikron.com
VGS = -20V
ID = 30A,
nC
VDS=12.5V,
VGS = 10V
VGS=10V, VDS=12.5V,
ns
RL=0.42Ω,
RGEN=3Ω
VGS = 0V,
pF
VDS = 12.5V,
ƒ = 1.0MHz
Ω
VGS=0V,VDS=0V,
f=1MHz
Version : 1.2
page 2 of 9
SSFM2506
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Maximum Body-Diode
Continuous Curren
Min.
Typ.
Max.
Units
—
60
—
A
Conditions
VSD
Diode Forward Voltage
—
0.69
1
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
18.3
—
ns
TJ = 25°C, IF =30A, di/dt =
Qrr
Reverse Recovery Charge
—
6.4
—
nC
150A/μs
Test circuits and Waveforms
Switch Waveforms:
©Silikron Semiconductor CO.,LTD.
2011.02.25
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Version : 1.2
page 3 of 9
SSFM2506
Typical electrical and thermal characteristics
100
100
10V
ID,drain current(A)
7V
80
ID,drain current(A)
90
6V
4.5V
60
4V
40
3.5V
20
VDS=5V
80
70
60
50
40
30
20
125℃
10
0
25℃
0
0
1
2
3
4
5
0
0.5
VDS,drain to source voltage(V)
Rdson,Drain-to-Source On
Resistance(Normalized)
Rdson,Drain-to-Source On
Resistance
VGS=4.5V
8
7
6
VGS=10V
4
3
0
5
10
15
20
25
1.9
1.8
2.5
3
3.5
4
4.5
5
VGS=10V
1.7
1.6
1.5
1.4
ID=30A
VGS=4.5V
1.3
1.2
1.1
1
ID=20A
0.9
0.8
0
30
25
50
75
100
125
150
175
200
Tj,Junction Temperature(°C)
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current
Figure 4: On-Resistance vs. Junction
and Gate Voltage
Temperature
1.E+02
IS,source to drain current(A)
30
Rdson,Drain-to-Source On
Resistance(Normalized)
2
Figure 2: Typical Transfer Characteristics
10
5
1.5
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics
9
1
ID=30A
25
20
125℃
15
10
25℃
5
0
2
3
4
5
6
7
8
9
10
1.E+01
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
VGS,gate to source voltage(V)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
VSD,source to drain voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
©Silikron Semiconductor CO.,LTD.
125℃
1.E+00
2011.02.25
www.silikron.com
Figure 6: Body-Diode Characteristics
Version : 1.2
page 4 of 9
SSFM2506
3000
10
9
2500
8
Capacitance (pF)
VGS,gate to source voltage(V)
Typical electrical and thermal characteristics
7
6
VDS=12.5V
5
4
ID=30A
3
Ciss
2000
1500
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
1000
Coss=Cds+Cgd
Coss
Crss=Cgd
2
500
Crss
1
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
VDS, drain to source voltage(V)
QG,gate charge(nC)
Figure 7: Gate-Charge Characteristics Figure
Figure 8: Capacitance Characteristics
200
1000
Tj(max)=175℃
160
100
10uS
140
Ron limited
100uS
10
DC
1mS
Power ( W)
ID,drain current(A)
180
100
80
60
10mS
1
Ta=25℃
120
40
Tj(max)=175℃ Tc=25℃
20
0.1
0.01
0.1
1
10
0
0.0001
100
0.001
0.01
VDS,drain to source voltage(V)
Figure 9: Maximum Forward Biased Safe
1
10
Figure 10: Single Pulse Power Rating
Operating Area⑤
Junction-to-Case⑤
60
60
50
50
ID,drain current(A)
Power Dissipation (W)
0.1
Pulse Width (s)
40
30
20
10
0
40
30
20
10
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
50
75
100
125
150
175
TCASE (°C)
Figure 11: Power De-rating③
©Silikron Semiconductor CO.,LTD.
25
Figure 12: Current De-rating③
2011.02.25
www.silikron.com
Version : 1.2
page 5 of 9
SSFM2506
Zθ JC,Transient Thermal
Resistance( Normalized
)
Typical electrical and thermal characteristics
10
t
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
tp
1
0.1
D=tp/t
TJ（max）＝PDM*Zθ JC*Rθ JC+TC
Rθ JC=2.5℃/W
0.01
0.00001 0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
Zθ JA,Transient Thermal
Resistance( Normalized
)
Figure 13: Normalized Maximum Transient Thermal Impedance⑤
10
Duty cycle D=0.5,0.3,0.1, 0.05,0.01,single
1
t
0.1
tp D=tp/t
TJ（max）＝PDM*Zθ JA*Rθ JA+TA
0.01
Rθ JA=36℃/W
0.001
0.00001 0.0001 0.001
0.01
0.1
1
Pulse Width (s)
10
100
1000
Figure 14: Normalized Maximum Transient Thermal Impedance⑥
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 6 of 9
SSFM2506
Mechanical Data：
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 7 of 9
SSFM2506
Ordering and Marking Information
Device Marking: SSFM2506
Package (Available)
TO-252
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
Units/Inner
Box
Inner
Units/Carton
Boxes/Carton Box
Box
TO-252
-
-
-
-
-
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 8 of 9
SSFM2506
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
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events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
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2011.02.25
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Version : 1.2
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