SSF3944J7-HF Main Product Characteristics: VDSS 30V RDS(on) 1.6mΩ (typ.) ID 150A PPAK5*6-8L Schematic diagram Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 150 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 118 IDM Pulsed Drain Current② 340 PD @TC = 25°C Power Dissipation③ 90 W VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy ② 180 mJ IAR Avalanche Current @ L=0.3mH② 60 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C ©Silikron Semiconductor CO., LTD. 2014.10.14 www.silikron.com Version: 1.0 Units A page 1 of 7 SSF3944J7-HF Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 2 ℃/W RθJA Junction-to-ambient (t ≤ 10s)④ — 50 ℃/W Electrical Characterizes@TA=25℃unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Min. Typ. Max. Units 30 — — V — 1.6 2.4 — 2.1 3.2 — 4 5 — 5 — 1 1.7 3 — 1.17 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 80 — Qgs Gate-to-Source charge — 19 — Qgd Gate-to-Drain("Miller") charge — 38 — td(on) Turn-on delay time — 20 — tr Rise time — 36 — td(off) Turn-Off delay time — 80 — tf Fall time — 33 — Ciss Input capacitance — 7032 — Coss Output capacitance — 898 — Crss Reverse transfer capacitance — 743 — mΩ mΩ Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 30A VGS=4.5V,ID = 25A VGS=4.5V,ID = 16A TJ = 125℃ V μA nA VDS = VGS, ID = 250μA TJ = 125℃ VDS = 24V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V VDS=15V, nC ID=30A, VGS=10V ns VGS=10V, VDS=15V, RGEN=1Ω, ID=1A VGS = 0V pF VDS = 15V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 150 A — — 340 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.85 1.3 V IS=50A, VGS=0V trr Reverse Recovery Time — 35 — ns TJ = 25°C, IF =1A, Qrr Reverse Recovery Charge — 15 — nC di/dt = 100A/μs ©Silikron Semiconductor CO., LTD. 2014.10.13 www.silikron.com Version: 1.0 page 2 of 7 SSF3944J7-HF Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ©Silikron Semiconductor CO., LTD. 2014.10.13 www.silikron.com Version: 1.0 page 3 of 7 SSF3944J7-HF Typical electrical characteristics Figure 1: Typical Output Characteristics Figure 2: Normalized RDSON vs. TJ Figure 3: Gate-Charge Characteristics Figure 4: Capacitance Characteristics Figure 5: Normalized Thermal transient Impedance Curve ©Silikron Semiconductor CO., LTD. Figure 6: Maximum Safe Operation Area 2014.10.13 www.silikron.com Version: 1.0 page 4 of 7 SSF3944J7-HF Mechanical Data: ©Silikron Semiconductor CO., LTD. 2014.10.13 www.silikron.com Version: 1.0 page 5 of 7 SSF3944J7-HF Ordering and Marking Information Device Marking: SSF3944J7-HF Package (Available) PPAK 5*6-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box PPAK5*6 5000 1 5000 25000 5 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices TJ=125℃ to 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2014.10.13 www.silikron.com Version: 1.0 page 6 of 7 SSF3944J7-HF ATTENTION: ■Any and all Silikron products described or contained herein do not have specifications that can handle applications that requireextremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2014.10.13 www.silikron.com Version: 1.0 page 7 of 7