SSF7NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 0.7Ω (typ.) ID 7A ① IPAK-NX Marking and Pin Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS70UGX series MOSFETs is a new technology, which combines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute Max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 4.3① IDM Pulsed Drain Current ② 21 Power Dissipation ③ 41 W Linear Derating Factor 0.33 W/°C VDS Drain-Source Voltage 700 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=100mH 112 mJ IAS Avalanche Current @ L=100mH 1.5 A -55 to +150 °C PD @TC = 25°C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2014.02.08 www.silikron.com Version : 1.1 A page 1 of 8 SSF7NS70UGX Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 3.0 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Min. Static Drain-to-Source on-resistance Typ. Max. Units V 700 — — — 0.7 0.85 — 1.54 — — 0.85 0.95 — 2.47 — 3 — 5 — 3.3 — — — 1 — — 50 — — 100 — — -100 VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate charge — 12 — Qgs Gate-to-Source charge — 3.2 — Qgd Gate-to-Drain("Miller") charge — 5.2 — td(on) Turn-on delay time — 12 — tr Rise time — 8.5 — td(off) Turn-Off delay time — 24 — tf Fall time — 14 — Ciss Input capacitance — 528 — Coss Output capacitance — 21 — Crss Reverse transfer capacitance — 2.7 — Ω Ω V μA nA Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 4.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =700V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 2.2A, nC VDS=480V, VGS = 10V ns VGS=10V, VDS =400V, RGEN=10.2Ω,ID =2.2A VGS = 0V pF VDS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 7① A — — 21 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.85 1.2 V IS=4.8A, VGS=0V trr Reverse Recovery Time — 133 — nS TJ = 25°C, IF = 2.2A, Qrr Reverse Recovery Charge — 819 — nC di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2014.02.08 www.silikron.com Version : 1.1 page 2 of 8 SSF7NS70UGX Test circuits and Waveforms EAS Test Circuit: Gate charge test circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2014.02.08 www.silikron.com Version : 1.1 page 3 of 8 SSF7NS70UGX Typical electrical and thermal characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. Figure 4: Normalized On-Resistance Vs. Case Temperature (VGS=10V,ID = 1A) 2014.02.08 www.silikron.com Version : 1.1 page 4 of 8 SSF7NS70UGX Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6. Typical Capacitance Vs. Drain-to-Source Temperature Voltage Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage Figure8. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2014.02.08 www.silikron.com Version : 1.1 page 5 of 8 SSF7NS70UGX Mechanical Data: IPAK-NX Package outline dimension ©Silikron Semiconductor CO.,LTD. (Unit:mm) 2014.02.08 www.silikron.com Version : 1.1 page 6 of 8 SSF7NS70UGX Ordering and Marking Information Device Marking: SSF7NS70UGX Package (Available) IPAK-NX Operating Temperature Rangec C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box IPAK-NX 80 56 4480 22400 5 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2014.02.08 www.silikron.com Version : 1.1 page 7 of 8 SSF7NS70UGX ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2014.02.08 www.silikron.com Version : 1.1 page 8 of 8