SSF18NS60
Main Product Characteristics:
VDSS
610V
RDS(on)
0.27Ω(typ.)
ID
15A ①
TO220
Marking and pin
Schematic diagram
Assignment
Features and Benefits:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description:
The SSF18NS60 series MOSFETs is a new technology. which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy
saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
15 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
9.4 ①
IDM
Pulsed Drain Current ②
60
Power Dissipation ③
156
W
Linear Derating Factor
1.25
W/°C
VDS
Drain-Source Voltage
610
V
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy @ L=22.5mH
180
mJ
IAS
Avalanche Current @ L=22.5mH
4
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2012.2.10
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Version : 1.1
Units
A
page 1 of 8
SSF18NS60
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case ③
—
0.8
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
Conditions
610
—
—
—
0.27
0.35
—
0.73
—
2
—
4
—
2.66
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
27.0
—
Qgs
Gate-to-Source charge
—
6.3
—
Qgd
Gate-to-Drain("Miller") charge
—
13.7
—
VGS = 10V
td(on)
Turn-on delay time
—
12.3
—
VGS=10V, VDS =480V,
tr
Rise time
—
24.3
—
td(off)
Turn-Off delay time
—
27.1
—
tf
Fall time
—
19.7
—
ID =12A
Ciss
Input capacitance
—
949
—
VGS = 0V
Coss
Output capacitance
—
783
—
Crss
Reverse transfer capacitance
—
11
—
Ω
V
μA
nA
VGS = 0V, ID = 250μA
VGS=10V,ID = 9.4A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 600V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 10A,
nC
nS
pF
VDS=480V,
RL=40Ω,
RGEN=4.1Ω
VDS = 25V
ƒ = 400KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
15 ①
A
—
—
60
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.89
1.3
V
IS=15A, VGS=0V
trr
Reverse Recovery Time
—
313
—
nS
TJ = 25°C, IF =15A, di/dt =
Qrr
Reverse Recovery Charge
—
3
—
μC
100A/μs
©Silikron Semiconductor CO.,LTD.
2012.2.10
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Version : 1.1
page 2 of 8
SSF18NS60
Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
©Silikron Semiconductor CO.,LTD.
2012.2.10
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Version : 1.1
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SSF18NS60
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2012.2.10
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Version : 1.1
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SSF18NS60
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
©Silikron Semiconductor CO.,LTD.
2012.2.10
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Version : 1.1
page 5 of 8
SSF18NS60
Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ3
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
0
7
0
3
-
©Silikron Semiconductor CO.,LTD.
0
3
-
2012.2.10
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E1
Min
0.087
0.050
0.390
-
0.508
-
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.516
0.524
0
7
0
7
50
70
90
0
0
50
1
3
Version : 1.1
page 6 of 8
SSF18NS60
Ordering and Marking Information
Device Marking: SSF18NS60
Package (Available)
TO220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
TO220
Units/
Tube
Tubes/Inner
Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner InnerBoxes/
Box
CartonBox
1000
6
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.2.10
www.silikron.com
Version : 1.1
Units/Carton
Box
6000
page 7 of 8
SSF18NS60
ATTENTION:
■
■
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■
■
■
■
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■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
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TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2012.2.10
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Version : 1.1
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