SSPL50N30H
Main Product Characteristics:
VDSS
300V
RDS(on)
45mΩ(typ.)
ID
50A ①
TO-247
Assignment
Features and Benefits:
Marking and Pin
Schematic Diagram
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V ①
50
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V ①
31
IDM
Pulsed Drain Current ②
192
Power Dissipation ③
390
W
Linear Derating Factor
3.12
W/°C
VDS
Drain-Source Voltage
300
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=60mH
4465
mJ
IAS
Avalanche Current @ L=60mH
12.2
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
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2014.07.09
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SSPL50N30H
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
0.32
℃/W
Junction-to-ambient (t ≤ 10s)④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
300
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
45
65
mΩ
VGS(th)
Gate threshold voltage
2
—
4
V
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
124
—
Qgs
Gate-to-Source charge
—
28
—
Qgd
Gate-to-Drain("Miller") charge
—
50
—
td(on)
Turn-on delay time
—
62
—
tr
Rise time
—
165
—
td(off)
Turn-Off delay time
—
303
—
tf
Fall time
—
144
—
Ciss
Input capacitance
—
5723
—
Coss
Output capacitance
—
725
—
Crss
Reverse transfer capacitance
—
32
—
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 25A
VDS = VGS, ID = 250μA
VDS =300V,VGS = 0V
μA
TJ = 125°C
VGS =30V
nA
VGS = -30V
ID = 40A,
nC
VDS=240V,
VGS = 10V
VGS=10V, VDS =150V,
nS
RGEN=25Ω
ID =40A
VGS = 0V
pF
VDS = 25V
ƒ = 800kHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
50 ①
A
—
—
192
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.66
1.5
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
333
—
nS
TJ = 25°C, IF =38.5A,
Qrr
Reverse Recovery Charge
—
2.5
—
μC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2014.07.09
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Version : 1.2
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SSPL50N30H
Test circuits and Waveforms
EAS Test Circuit:
Switching Time Test Circuit:
Gate charge test circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2014.07.09
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SSPL50N30H
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1.Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4.Normalized On-Resistance Vs. Case
Temperature
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SSPL50N30H
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
©Silikron Semiconductor CO.,LTD.
Voltage
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SSPL50N30H
Mechanical Data：
©Silikron Semiconductor CO.,LTD.
2014.07.09
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SSPL50N30H
Ordering and Marking Information
Device Marking: SSPL50N30H
Package (Available)
TO-247
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO247
30
8
240
1200
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=150℃ @ 80% of
Max VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2014.07.09
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Version : 1.2
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SSPL50N30H
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Any and all information described or contained herein are subject to change without notice due to
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Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2014.07.09
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