SSF7NS65UD
Main Product Characteristics
VDSS
650V
RDS(on)
0.65Ω (typ.)
ID
7A ①
TO-252 (DPAK)
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
The SSF7NS65UD series MOSFETs is a new technology, which combines an innovative technology
and advance process.
This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
7①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
5①
IDM
Pulsed Drain Current ②
28
Power Dissipation ③
42
W
Linear Derating Factor
0.33
W/°C
VDS
Drain-Source Voltage
650
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=100mH
480
mJ
IAS
Avalanche Current @ L=100mH
3.1
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
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2013.08.27
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Units
A
page 1 of 8
SSF7NS65UD
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case ③
—
3.0
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Min.
Static Drain-to-Source on-resistance
Typ.
Max.
Units
V
650
—
—
—
0.65
0.75
—
1.38
—
—
0.77
0.85
—
2.0
—
2
—
4
—
2.2
—
—
—
1
—
—
50
—
—
100
—
—
-100
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Total gate charge
—
13
—
Qgs
Gate-to-Source charge
—
2.6
—
Qgd
Gate-to-Drain("Miller") charge
—
3.1
—
td(on)
Turn-on delay time
—
9.6
—
tr
Rise time
—
6
—
td(off)
Turn-Off delay time
—
26
—
tf
Fall time
—
10
—
Ciss
Input capacitance
—
500
—
Coss
Output capacitance
—
24
—
Crss
Reverse transfer capacitance
—
3
—
Ω
Ω
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VGS=10V,ID = 4.8A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =650V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 5A,
nC
VDS=200V,
VGS = 10V
ns
VGS=10V, VDS =400V,
RGEN=10.2Ω,ID =2.2A
VGS = 0V
pF
VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
7①
A
—
—
28
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.85
1.2
V
IS=4.8A, VGS=0V
trr
Reverse Recovery Time
—
111
—
nS
TJ = 25°C, IF = 2.2A,
Qrr
Reverse Recovery Charge
—
639
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.08.27
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SSF7NS65UD
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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SSF7NS65UD
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1.Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4.Normalized On-Resistance Vs. Case
Case Temperature
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Temperature
2013.08.27
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SSF7NS65UD
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
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2013.08.27
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SSF7NS65UD
Mechanical Data
TO-252 PACKAGE OUTLINE DIMENSION
Symbol
A
B
b
b1
C
D
D1
E
e1
e2
L1
L2
L3
K
Dimension In Millimeters
Min
Nom
Max
2.200
2.400
0.950
1.250
0.500
0.700
0.450
0.550
0.450
0.550
6.450
6.750
5.200
5.400
5.950
6.250
2.240
2.340
4.430
4.730
9.450
9.950
1.250
1.750
0.600
0.900
0.000
0.100
©Silikron Semiconductor CO.,LTD.
2013.08.27
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Dimension In Inches
Min
Nom
Max
0.087
0.094
0.037
0.049
0.020
0.028
0.018
0.022
0.018
0.022
0.254
0.266
0.205
0.213
0.234
0.246
0.088
0.092
0.174
0.186
0.372
0.392
0.049
0.069
0.024
0.035
0.000
0.004
Version : 1.0
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SSF7NS65UD
Ordering and Marking Information
Device Marking: SSF7NS65UD
Package (Available)
TO-252(DPAK)
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit（options）
Package
Type
TO-252
TO-252
TO-252
Units/Tape Tapes/Inner
Box
2500
2500
800
2
1
5
Units/Inner
Box
5000
2500
4000
Inner
Boxes/Carton
Box
7
10
8
Units/Carton
Box
35000
25000
32000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2013.08.27
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Version : 1.0
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SSF7NS65UD
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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