SSFM3008L Main Product Characteristics:
VDSS
30V
RDS(on)
5.0mohm(typ.)
ID
50A
SSFM3008L
SSFM3008
TO252 Assignment Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Schematic diagram Marking and pin
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
50
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
40
IDM
Pulsed Drain Current②
200
Power Dissipation③
100
W
Linear Derating Factor
0.55
W/°C
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH
100
mJ
IAS
Avalanche Current @ L=0.1mH
44
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
©Silikron Semiconductor CO., LTD.
2011.11.05
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A
page 1 of 8
SSFM3008L Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
1.5
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
45
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
20
℃/W
Electrical Characterizes @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
unless otherwise specified
Min.
Typ.
Max.
Units
Conditions
30
36.5
—
V
—
5.0
8
mΩ
VGS=10V,ID =20A
—
7.5
10
mΩ
VGS=4.5V,ID =10A
Gate threshold voltage
1
—
3
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
10
μA
VDS = 30V,VGS = 0V
IGSS
Gate-to-Source forward leakage
— — 100
-100 — —
Qg
Total gate charge
— 35
—
Qgs
Gate-to-Source charge
— 7.9
—
Qgd
Gate-to-Drain("Miller") charge
— 8.7
—
td(on)
Turn-on delay time
— 11.5
—
tr
Rise time
— 46.5
—
td(off)
Turn-Off delay time
— 25.8
—
tf
Fall time
— 6.5
—
Ciss
Input capacitance
— 2055
—
Coss
Output capacitance
— 356
—
Crss
Reverse transfer capacitance
— 226
—
nA
VGS = 0V, ID = 250μA
VGS =20V
VGS = -20V
VDS=15V,
nC
ID=20A,
VGS=10V
ns
VGS=10V, VDS=15V,
RGEN=3Ω, ID=20A
VGS = 0V
pF
VDS = 15V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
Min.
Typ.
Max.
Units
—
—
50
A
Conditions
MOSFET symbol
showing the
ISM
Pulsed Source Current
—
—
200
A
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.5
1.0
V
IS=1.0A, VGS=0V
trr
Reverse Recovery Time
—
12.4
—
ns
TJ = 25°C, IF =20A, di/dt
Qrr
Reverse Recovery Charge
—
11.7
—
nC
= 300A/μs
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com Version:1.0
page 2 of 8
SSFM3008L Test circuits and Waveforms
Switch Waveforms:
Notes: ①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO., LTD.
2011.11.05
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SSFM3008L Typical electrical characteristics
100
100
10V
6V
ID,drain current(A)
ID,drain current(A)
90
7V
80
4.5V
60
4V
40
3.5V
20
VDS=5V
80
70
60
50
40
30
20
125℃
10
25℃
0
0
0
1
2
3
4
0
5
0.5
VDS,drain to source voltage(V)
1.5
2
2.5
3
3.5
4
4.5
5
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics Figure 2: Typical Transfer Characteristics 1.E+02
IS,source to drain current(A)
30
Rdson,Drain-to-Source On
Resistance(Normalized)
1
ID=30A
25
20
125℃
15
10
25℃
5
0
2
3
4
5
6
7
8
9
10
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
VGS,gate to source voltage(V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
VSD,source to drain voltage(V)
Figure 4: Body-Diode Characteristics Figure 3: On-Resistance vs. Gate-Source
Voltage 3000
9
2500
8
Capacitance (pF)
VGS,gate to source voltage(V)
10
7
6
5
VDS=15V
4
ID=20A
3
2
Ciss
2000
VGS=0,F=1MHZ
1500
Ciss=Cgd+Cgs, Cds shorted
1000
Coss=Cds+Cgd
Coss
Crss=Cgd
500
Crss
1
0
0
0
5
10
15
20
25
30
35
0
5
©Silikron Semiconductor CO., LTD.
15
20
25
VDS, drain to source voltage(V)
QG,gate charge(nC)
Figure 5: Gate-Charge Characteristics 10
Figure 6: Capacitance Characteristics 2011.11.05
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page 4 of 8
SSFM3008L Typical thermal characteristics
200
1000
100
10uS
Ron limited
Power ( W)
ID,drain current(A)
180
100uS
10
DC
1mS
160
Tj(max)=175℃
140
Ta=25℃
120
100
60
10mS
1
80
40
Tj(max)=175℃ Tc=25℃
20
0.1
0.01
0.1
1
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
VDS,drain to source voltage(V)
Figure 7: Maximum Forward Biased Safe
Figure 8: Single Pulse Power Rating
Operating Area Junction-to-Case
60
50
50
ID,drain current(A)
Power Dissipation (W)
60
40
30
20
10
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0
25
50
75
TCASE (°C)
ZθJC,Transient Thermal
Resistance( Normalized
)
Figure 9: Power De-rating 10
125
150
175
Figure 10: Current De-rating t
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
tp
1
0.1
100
TCASE (°C)
D=tp/t
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=2.5℃/W
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
Figure 11: Normalized Thermal transient Impedance Curve
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com Version:1.0
page 5 of 8
SSFM3008L Mechanical Data：
©Silikron Semiconductor CO., LTD.
2011.11.05
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page 6 of 8
SSFM3008L Ordering and Marking Information
Device Marking: SSFM3008L
Package (Available)
TO252
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
TO-252
80
Tubes/Inner
Box
50
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Boxes/Carton
Box
Box
4000
10
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
TJ=125℃ to 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com Version:1.0
Units/Carton
Box
40000
page 7 of 8
SSFM3008L ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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©Silikron Semiconductor CO., LTD.
2011.11.05
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