2SC2229 50mA , 200V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES High Breakdown Voltage High Transition Frequency A D B K E F C N G H 1 Emitter 2 Collector 3 Base M J L Collector 2 3 Base 1 REF. A B C D E F G Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J K L M N Millimeter Min. Max. 1.70 2.05 2.70 3.20 0.85 1.15 1.60 Max 0.00 0.40 4.00 Min Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance, Junction To Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 200 150 5 50 800 156 150, -55~150 V V V mA mW °C/W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency http://www.SeCoSGmbH.com/ 12-Dec-2014 Rev. A Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 200 150 5 70 50 50 80 - 0.1 0.1 240 0.5 1 - V V V µA µA hFE VCE(sat) VBE fT V V MHz Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=1mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=30V, IC=10mA Any changes of specification will not be informed individually. Page 1 of 2 2SC2229 Elektronische Bauelemente 50mA , 200V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 12-Dec-2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 2