2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency REF. A B C D E F G H J K CLASSIFICATION OF hFE 2SC1959-O 2SC1959-Y 2SC1959-GR hFE(1) 70~140 120~240 200~400 hFE(2) 25 (Min) 40 (Min) - Product-Rank Range MARKING Emitter Collector Base C1923 □ 031 hFE Rank Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG 35 30 5 500 500 250 150, -55~150 V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE Cob fT 35 30 5 70 25 - 7 300 0.1 0.1 400 0.25 1 - V V V μA μA DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Collector Output Capacitance Transition Frequency http://www.SeCoSGmbH.com/ 11-Sep-2012 Rev. D V V pF MHz Test Conditions IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IC=10mA VCE=1V, IC=100mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=20mA Any changes of specification will not be informed individually. Page 1 of 2 2SC1959 Elektronische Bauelemente 0.5 A , 35 V NPN Plastic Encapsulated Transistor RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-Sep-2012 Rev. D Any changes of specification will not be informed individually. Page 2 of 2