RoHS BAV756DW D T ,. L SOT-363 BAV756DW SWITCHING DIODE FEATURES Power dissipation PD : 200 mW (Tamb=25℃) Collector current IF: 150 mA Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ MARKING:KCA R T C E L ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage E Reverse voltage leakage current J E Forward voltage Junction capacitance W Reveres recovery time WEJ ELECTRONIC CO. O unless Symbol Test V(BR) R IR= 2.5µA IC C O N otherwise conditions specified) MIN MAX 75 UNIT V VR=75V 2.5 VR=20V 0.025 VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Cj VR=0V 2 pF 4 nS IR f=1MHz µA IF=IR=10mA trr Irr=0.1ХIR RL=100Ω Http:// www.wej.cn E-mail:[email protected] RoHS BAV756DW R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]