RoHS BAS16T/BAW56T/BAV70T/BAV99T BAS16T/BAW56T/BAV70T/BAV99T D T ,. L 1.60 1.00 SWITCHING DIODE 0.20 1.60 FEATURES 0.30 Power dissipation PD: 150 0.50 mW (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ BAS16T Marking: A2 R T BAW56T Marking: JD C E L E Parameter J E Reverse breakdown voltage Reverse voltage W Forward Diode O IC Symbol SOT-523 N BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25℃ C O 0.81 Forward Current IF: 75 m A Reverse Voltage VR: 85 V Operating and storage junction temperature range BAV99T Marking: JE unless otherwise specified) Test conditions MIN MAX UNIT V(BR) IR= 100µA IR1 VR=75V 2 µA IR2 VR=25V 0.03 µA IF=1mA 715 IF=10mA 855 IF=50mA 1000 IF=150mA 1250 VR=0V, f=1MHz 1.5 pF 4 nS 85 V leakage current voltage capacitance Reverse recovery time WEJ ELECTRONIC CO. VF CD t rr Http:// www.wej.cn mV E-mail:[email protected] RoHS BAS16T/BAW56T/BAV70T/BAV99T R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]