RoHS MMBD4148/BAS16TW MMBD4148TW /BAS16TW D T ,. L SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ 6 4 R T C E L A 1 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ E Parameter Reverse breakdown voltage J E Reverse voltage leakage current Symbol V(BR) R IR O N MAKING: KA2 unless otherwise specified) Test conditions IR= 100µA MAX UNIT V VR=75V 1 VR=20V 0.025 0.715 0.855 1 1.25 V 2 pF 4 nS Forward voltage VF Total capacitance CT VR=0V, f=1MHz Reveres recovery time trr WEJ ELECTRONIC CO. MIN 75 IF=1mA IF=10mA IF=50mA IF=150mA W C O IF=IR=10mA Irr=0.1×IR, RL=100Ω Http:// www.wej.cn µA E-mail:[email protected]