PESD5V0F1BL - NXP Semiconductors

PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Rev. 3 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless
ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect
one signal line from the damage caused by ESD and other transients. The combination of
extremely low capacitance, high ESD maximum rating and ultra small package makes the
device ideal for high-speed data line protection and antenna protection applications.
1.2 Features and benefits
 Bidirectional ESD protection of one line  ESD protection up to 10 kV
 IEC 61000-4-2; level 4 (ESD)
 Femtofarad capacitance: Cd = 400 fF
 Low ESD clamping voltage: 30 V
 AEC-Q101 qualified
at 30 ns and  8 kV
 Very low leakage current: IRM < 1 nA
1.3 Applications




10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
Subscriber Identity Module (SIM) card
protection
 Cellular handsets and accessories




Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
 Antenna protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
5.5
V
-
0.4
0.55
pF
Per device
VRWM
reverse standoff voltage
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD5V0F1BL
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode (diode 1)
2
cathode (diode 2)
Simplified outline
1
Graphic symbol
1
2
2
sym045
Transparent
top view
3. Ordering information
Table 3.
Ordering information
Type number
PESD5V0F1BL
Package
Name
Description
Version
-
leadless ultra small plastic package; 2 terminals;
body 1.0  0.6  0.5 mm
SOD882
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0F1BL
ZZ
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPP
peak pulse current
tp = 8/20 s
-
2.5
A
Tj
junction temperature
-
125
C
Tamb
ambient temperature
40
+125
C
Tstg
storage temperature
55
+125
C
Per device
[1]
PESD5V0F1BL
Product data sheet
[1]
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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PESD5V0F1BL
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
Table 6.
ESD maximum ratings
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
10
kV
-
10
kV
Per device
VESD
[1]
MIL-STD-883
(human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
ESD standards compliance
Standard
Conditions
Per device
IEC 61000-4-2; level 4 (ESD)
> 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 μs
IPP
(%)
80
e−t
50 % IPP; 20 μs
40
10 %
0
10
20
30
30 ns
40
t (μs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
8/20 s pulse waveform according to
IEC 61000-4-5
PESD5V0F1BL
Product data sheet
60 ns
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
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Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
Femtofarad bidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per device
VRWM
reverse standoff
voltage
-
-
5.5
V
IRM
reverse leakage current VRWM = 5 V
-
1
100
nA
VBR
breakdown voltage
IR = 1 mA
6
8
10
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V
-
0.4
0.55
pF
VCL
clamping voltage
IPP = 1 A
-
-
11
V
IPP = 2.5 A
-
-
15
V
IR = 20 mA
-
-
30

differential resistance
rdif
[1]
[1]
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
006aab598
0.5
IPP
Cd
(pF)
0.4
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
0.3
−
0.2
−6.0
−2.0
2.0
+
−IPP
6.0
VR (V)
006aaa676
f = 1 MHz; Tamb = 25 C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
PESD5V0F1BL
Product data sheet
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
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Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
Femtofarad bidirectional ESD protection diode
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
vertical scale = 50 V/div
horizontal scale = 15 ns/div
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 50 V/div
horizontal scale = 15 ns/div
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 5.
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab599
ESD clamping test setup and waveforms
PESD5V0F1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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PESD5V0F1BL
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
7. Application information
PESD5V0F1BL is designed for the protection of one bidirectional data or signal line from
the damage caused by ESD and surge pulses. The device may be used on lines where
the signal polarities are both, positive and negative with respect to ground.
ANTENNA
GPS
PESD5V0F1BL
GND
Fig 6.
006aab600
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0F1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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PESD5V0F1BL
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
9. Package outline
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1.02
0.95
1
0.55
0.47
cathode marking on top side
Dimensions in mm
03-04-17
This is a generic drawing for SOD882 package. This product has no cathode marking.
Fig 7.
Package outline PESD5V0F1BL (SOD882)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
10000
PESD5V0F1BL SOD882
[1]
PESD5V0F1BL
Product data sheet
2 mm pitch, 8 mm tape and reel
-315
For further information and the availability of packing methods, see Section 14.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
Femtofarad bidirectional ESD protection diode
11. Soldering
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
(2×)
sod882_fr
Reflow soldering is the only recommended soldering method.
Fig 8.
PESD5V0F1BL
Product data sheet
Reflow soldering footprint PESD5V0F1BL (SOD882)
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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Femtofarad bidirectional ESD protection diode
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0F1BL v.3
20111024
Product data sheet
-
PESD5V0F1BL v.2
Modifications:
•
•
Figure 7 “Package outline PESD5V0F1BL (SOD882)”: updated.
Section 13 “Legal information”: updated.
PESD5V0F1BL v.2
20110323
Product data sheet
-
PESD5V0F1BL v.1
PESD5V0F1BL v.1
20091001
Product data sheet
-
-
PESD5V0F1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
Femtofarad bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
PESD5V0F1BL
Product data sheet
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Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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Femtofarad bidirectional ESD protection diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD5V0F1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
© NXP B.V. 2011. All rights reserved.
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Femtofarad bidirectional ESD protection diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 October 2011
Document identifier: PESD5V0F1BL