DISCRETE SEMICONDUCTORS '$7$ 6+((7 BYV79E series Rectifier diodes ultrafast, rugged Product specification July 1998 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series FEATURES SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 150 V/ 200 V k 1 VF ≤ 0.9 V a 2 IF(AV) = 14 A IRRM ≤ 0.2 A trr ≤ 30 ns GENERAL DESCRIPTION PINNING Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. PIN The BYV79E series is supplied in the conventional leaded SOD59 (TO220AC) package. SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. BYV79E VRRM VRWM VR IF(AV) IFRM IFSM IRRM IRSM Tstg Tj Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 145˚C 1 Average forward current square wave δ = 0.5; Tmb ≤ 120 ˚C Repetitive peak forward current t = 25 μs; δ = 0.5; Tmb ≤ 120 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 μs; δ = 0.001 Non-repetitive peak reverse tp = 100 μs current Storage temperature Operating junction temperature - MAX. -150 150 150 150 UNIT -200 200 200 200 V V V - 14 A - 28 A - 150 160 A A - 0.2 0.2 A A -40 - 150 150 ˚C ˚C 1. Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ July 1998 1 MIN. MAX. UNIT - 8 kV Rev 1.200 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air MIN. TYP. MAX. UNIT - - 2 K/W - 60 - K/W MIN. TYP. MAX. UNIT - 0.83 0.95 1.2 0.5 5 6 20 0.90 1.05 1.4 1.3 50 15 30 V V V mA μA nC ns - 13 1 22 - ns V STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs trr1 Reverse recovery charge Reverse recovery time trr2 Vfr Reverse recovery time Forward recovery voltage IF = 14 A; Tj = 150˚C IF = 14 A IF = 50 A VR = VRWM; Tj = 100 ˚C VR = VRWM IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/μs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/μs July 1998 2 Rev 1.200 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYV79E series 0.5A F dt IF t 0A rr time Q 10% s I rec = 0.25A IR 100% trr2 I I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 20 F BYV79 PF / W Tmb(max) / C 110 D = 1.0 Vo = 0.744 V Rs = 0.0112 Ohms 0.5 120 15 0.2 time 0.1 10 130 VF V tp I 5 D= tp T 140 fr t T VF 0 time Fig.2. Definition of Vfr 0 5 10 15 IF(AV) / A 20 150 25 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. R 15 PF / W BYV79 Tmb(max) / C 120 a = 1.57 Vo = 0.744 V Rs = 0.0112 Ohms 1.9 2.2 D.U.T. 2.8 10 Voltage Pulse Source Current shunt 140 5 to ’scope 0 0 5 IF(AV) / A 10 150 15 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Circuit schematic for trr2 July 1998 130 4 3 Rev 1.200 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series trr / ns 1000 Qs / nC 1000 IF=10A IF=10A 5A 2A 100 100 IF=1A 10 10 1 1 10 dIF/dt (A/us) 1.0 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-mb (K/W) 1 1 IF=2A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C. tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV79E 10s Fig.11. Transient thermal impedance; Zth j-mb = f(tp). IF / A 60 Tj = 150 C 50 Tj = 25 C 40 30 20 typ 10 max 0 0 0.5 1.0 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj July 1998 4 Rev 1.200 1;3 Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.12. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.200 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. 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