DISCRETE SEMICONDUCTORS DATA SHEET BYW29EB, BYW29ED series Rectifier diodes ultrafast, rugged Product specification November 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYW29EB, BYW29ED series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 150 V/ 200 V k tab VF ≤ 0.895 V a 3 IF(AV) = 8 A IRRM = 0.2 A trr ≤ 25 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYW29EB series is supplied in the SOT404 surface mounting package. The BYW29ED series is supplied in the SOT428 surface mounting package. PINNING PIN SOT404 DESCRIPTION 1 no connection 2 cathode1 3 anode tab SOT428 tab tab 2 1 cathode 2 1 3 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. BYW29EB/ BYW29ED VRRM VRWM VR IF(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Peak non-repetitive reverse surge current Operating junction temperature Storage temperature MAX. UNIT - -150 150 -200 200 V - 150 200 V - 150 200 V square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 µs; δ = 0.001 - 80 88 A A - 0.2 A tp = 100 µs - 0.2 A - 150 ˚C - 40 150 ˚C 1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. November 1998 1 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EB, BYW29ED series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT404 and SOT428 packages, pcb mounted, minimum footprint, FR4 board TYP. MAX. UNIT - - 2.7 K/W - 50 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qrr trr1 trr2 Vfr Reverse recovered charge Reverse recovery time Reverse recovery time Forward recovery voltage IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs November 1998 MIN. 2 - TYP. MAX. UNIT 0.8 0.92 1.1 2 0.2 4 20 15 1 0.895 1.05 1.3 10 0.6 11 25 20 - V V V µA mA nC ns ns V Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYW29EB, BYW29ED series 0.5A F dt IF t 0A rr time Q I 10% s I rec = 0.25A IR 100% trr2 I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 12 F Tmb(max) / C 108 D = 1.0 BYW29 PF / W Vo = 0.791 V Rs = 0.013 Ohms 115 10 0.5 8 time 122 0.2 6 129 0.1 VF 4 tp I V 143 t T 0 time Fig.2. Definition of Vfr 0 2 4 6 IF(AV) / A 8 10 150 12 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. R 8 PF / W a = 1.57 Rs = 0.013 Ohms 132.5 4 4 to ’scope 129 2.8 5 Voltage Pulse Source 122 125.5 1.9 2.2 6 D.U.T. Tmb(max) / C BYW29 Vo = 0.791 V 7 136 3 139.5 2 143 1 146.5 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Circuit schematic for trr2 November 1998 136 tp T 2 fr VF Current shunt D= 3 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EB, BYW29ED series trr / ns 100 Qs / nC 1000 IF=10A 5A 2A 1A IF=10A 100 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-mb (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C. 30 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.11. Transient thermal impedance; Zth j-mb = f(tp). BYW29 IF / A Tj=150 C Tj=25 C 20 typ max 10 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj November 1998 4 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EB, BYW29ED series MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.12. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.13. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". November 1998 5 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EB, BYW29ED series MECHANICAL DATA Dimensions in mm seating plane Net Mass: 1.1 g 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.14. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.15. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". November 1998 6 Rev 1.300 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. 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