DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXT2222A NPN switching transistor Product data sheet Supersedes data of 1999 Apr 14 2004 Nov 22 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • General purpose switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement: PXT2907A. 2 3 MARKING 3 TYPE NUMBER MARKING PXT2222A 2 1 1 sym042 CODE(1) *1P Note Fig.1 Simplified outline (SOT89) and symbol. 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PXT2222A 2004 Nov 22 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation note 1 − 0.5 W note 2 − 0.8 W note 3 Tamb ≤ 25 °C − 1.1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aaa238 1600 Ptot (mW) 1200 800 (1) (2) (3) 400 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 22 3 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT in free air note 1 250 K/W note 2 156 K/W note 3 113 K/W 30 K/W thermal resistance from junction to soldering point Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aaa235 103 Zth (K/W) 102 (1) (3) (2) (4) (5) (6) (7) 10 (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 22 4 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A 006aaa236 103 Zth (K/W) (1) 102 (2) (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa237 103 Zth (K/W) 102 (1) (3) (2) (4) (5) (6) 10 (7) (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 22 5 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. MAX. UNIT IE = 0 A; VCB = 60 V − 10 nA IE = 0 A; VCB = 60 V; Tj = 125 °C − 10 µA nA IEBO emitter-base cut-off current IC = 0 A; VBE = 5 V − 10 hFE DC current gain IC = 0.1 mA; VCE = 10V 35 − IC = 1 mA; VCE = 10 V 50 − IC = 10 mA; VCE = 10 V 75 − IC = 10 mA; VC = 10 V; Tj = −55 °C 35 − IC = 150 mA; VCE = 1 V 50 − IC = 150 mA; VCE = 10 V 100 300 IC = 500 mA; VCE = 10 V 40 − collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 300 mV IC = 500 mA; IB = 50 mA − 1 V VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V IC = 500 mA; IB = 50 mA − 2 V Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0 A; VEB = 500 mV; f = 1 MHz − 25 pF fT transition frequency IC = 20 mA; VCE = 10 V; f = 100 MHz 300 − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 4 dB − 35 ns − 15 ns VCEsat Switching times (between 10% and 90% levels); (see Fig.6) ton turn-on time td delay time tr rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns 2004 Nov 22 ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA 6 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A VBB handbook, full pagewidth RB oscilloscope VCC RC Vo (probe) 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.6 Test circuit for switching times. 2004 Nov 22 7 oscilloscope NXP Semiconductors Product data sheet NPN switching transistor PXT2222A PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 22 REFERENCES IEC JEDEC JEITA TO-243 SC-62 8 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 22 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp10 Date of release: 2004 Nov 22 Document order number: 9397 750 13894