PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −20 V IC collector current - - −6.6 A ICM peak collector current single pulse; tp ≤ 1 ms - - −20 A RCEsat collector-emitter saturation resistance IC = −6 A; IB = −600 mA - 22 33 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Graphic symbol 4 2, 4 1 1 2 3 3 sym028 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4021PZ SC-73 plastic surface-mounted package with increased heat sink; 4 leads SOT223 4. Marking Table 4. Marking codes Type number Marking code PBSS4021PZ PB4021PZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PBSS4021PZ_1 Product data sheet Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −20 V VCEO collector-emitter voltage open base - −20 V VEBO emitter-base voltage open collector - −5 V IC collector current - −6.6 A ICM peak collector current - −20 A IB base current - −1 A single pulse; tp ≤ 1 ms All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 770 mW [2] - 1700 mW [3] - 2600 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac060 3.0 (1) Ptot (W) 2.0 (2) 1.0 0 −75 (3) −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. PBSS4021PZ_1 Product data sheet Power derating curves All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 160 K/W [2] - - 75 K/W [3] - - 50 K/W - - 11 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac061 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021PZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 006aac062 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac063 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 0.33 10 0.20 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021PZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions collector-base cut-off VCB = −20 V; IE = 0 A current VCB = −20 V; IE = 0 A; Tj = 150 °C Max Unit - - −100 nA - - −55 μA collector-emitter cut-off current VCE = −16 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V; IC = −500 mA 250 400 - VCE = −2 V; IC = −1 A 250 400 - VCE = −2 V; IC = −2 A 200 350 - VCE = −2 V; IC = −4 A 150 250 - 100 180 - IC = −1 A; IB = −50 mA - −31 −50 mV IC = −1 A; IB = −10 mA - −53 −80 mV IC = −2 A; IB = −40 mA - −66 −100 mV IC = −4 A; IB = −200 mA - −95 −140 mV IC = −4 A; IB = −40 mA - −150 −225 mV [1] VCE = −2 V; IC = −7 A collector-emitter saturation voltage [1] IC = −7 A; IB = −350 mA - −160 −240 mV [1] - 22 33 mΩ RCEsat collector-emitter IC = −6 A; IB = −600 mA saturation resistance VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA [1] - −0.79 −0.9 V IC = −4 A; IB = −400 mA [1] - −0.94 −1.05 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A [1] - −0.73 −0.85 V td delay time - 55 - ns tr rise time - 60 - ns ton turn-on time VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A - 115 - ns ts storage time - 400 - ns tf fall time - 110 - ns toff turn-off time - 510 - ns fT transition frequency - 85 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 125 - pF [1] Product data sheet Typ ICES VCEsat PBSS4021PZ_1 Min VCE = −10 V; IC = −100 mA; f = 100 MHz Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 006aac072 600 hFE (1) 006aac073 −20.0 IB (mA) = −250 −225 IC (A) −200 −15.0 −150 400 −175 −125 −100 −75 (2) −10.0 −50 200 −25 (3) 0 −10−1 −1 −10 −102 −5.0 −103 0.0 0.0 −104 −105 IC (mA) VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aac074 −1.4 VBE (V) Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aac075 −1.4 VBEsat (V) −1.0 −1.0 (1) (1) (2) (2) −0.6 −0.6 (3) (3) −0.2 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) −0.2 −10−1 VCE = −2 V −1 −10 (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Product data sheet −104 −105 IC (mA) (1) Tamb = −55 °C (2) Tamb = 25 °C PBSS4021PZ_1 −103 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −102 Fig 8. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 006aac076 −1 006aac077 −10 VCEsat (V) VCEsat (V) −1 −10−1 (1) (2) −10−1 (3) (1) −10−2 (2) −10−2 (3) −10−3 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) −10−3 −10−1 −1 −102 −103 −104 −105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. −10 Collector-emitter saturation voltage as a function of collector current; typical values 006aac078 102 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aac079 103 RCEsat (Ω) RCEsat (Ω) 102 10 (1) 10 1 (2) 1 (1) (2) 10−1 (3) (3) 10−2 −10−1 −1 −10 −102 −103 10−1 −104 −105 IC (mA) 10−2 −10−1 −1 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −102 −103 −104 −105 IC (mA) Tamb = 25 °C IC/IB = 20 PBSS4021PZ_1 −10 Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4021PZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 3 2.3 4.6 0.8 0.6 Dimensions in mm 0.32 0.22 04-11-10 Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS4021PZ [1] PBSS4021PZ_1 Product data sheet Package Description SOT223 8 mm pitch, 12 mm tape and reel Packing quantity 1000 4000 -115 -135 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS4021PZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4021PZ_1 20100331 Product data sheet - - PBSS4021PZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. 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All rights reserved. 13 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS4021PZ_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 31 March 2010 Document identifier: PBSS4021PZ_1