TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V - - -2 A - 90 115 mΩ drain current ID VGS = -4.5 V; Tj = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline 6 5 Graphic symbol D 4 G 1 2 3 SOT363 (TSSOP6) S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMG85XP TSSOP6 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] PMG85XP YA% [1] % = placeholder for manufacturing site code PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 2 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage V drain current ID total power dissipation Ptot 12 VGS = -4.5 V; Tj = 25 °C - -2 A VGS = -4.5 V; Tj = 100 °C [1] - -1.3 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -12 [1] Tamb = 25 °C - -8 A [2] - 375 mW [1] - 725 mW - 2400 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -0.7 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Normalized total power dissipation as a function of junction temperature PMG85XP Product data sheet 0 −75 175 Tj (°C) Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 3 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa190 –10 (1) Limit RDSon = VDS/ID ID (A) (2) –1 (3) (4) (5) –10–1 (6) –10–2 –10–1 –1 –10 –102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 290 334 K/W [2] - 150 173 K/W - 45 52 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 4 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa191 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa193 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.1 0.33 0.2 0.05 10 0.02 0.01 0 1 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.65 -0.9 -1.15 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -15 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -2 A; Tj = 25 °C - 90 115 mΩ VGS = -4.5 V; ID = -2 A; Tj = 150 °C - 130 166 mΩ VGS = -2.5 V; ID = -2 A; Tj = 25 °C - 125 160 mΩ VDS = -5 V; ID = -2 A; Tj = 25 °C - 6.3 - S VDS = -10 V; ID = -1 A; VGS = -4.5 V; Tj = 25 °C - 4.8 7.2 nC - 1.1 - nC - 1 - nC RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = -2.5 A - 560 - pF - 80 - pF - 55 - pF - 13 - ns - 35 - ns turn-off delay time - 39 - ns fall time - 25 - ns - -0.7 -1.2 V Source-drain diode VSD source-drain voltage PMG85XP Product data sheet IS = -0.7 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa198 –8 –4.5 V ID (A) –3.0 V –3.5 V 017aaa129 −10−3 VGS = –2.5 V ID (A) –6 −10−4 –2.25 V (1) (3) (2) –4 –2.0 V −10−5 –2 –1.8 V –1.5 V 0 0 –1 –2 –3 VDS (V) –4 −10−6 0.0 −0.5 −1.0 VGS (V) − 1.5 Tj = 25 °C; VDS = -3 V Tj = 25 °C (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa273 300 RDSon (mΩ) (1) (2) Fig 7. Sub-threshold drain current as a function of gate-source voltage 017aaa274 500 RDSon (mΩ) (3) 240 400 180 300 (4) 120 200 (5) (1) (6) 60 100 (2) 0 –2 –4 –6 ID (A) 0 –8 0 –2 Tj = 25 °C ID = -2.5 A (1) VGS = -2.0 V (1) Tj = 125 °C (2) VGS = -2.25 V (2) Tj = 25 °C –4 –6 VGS (V) –8 (3) VGS = -2.5 V (4) VGS = -3.0 V (5) VGS = -3.5 V (6) VGS = -4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMG85XP Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 7 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa275 –8 017aaa276 1.6 a ID (A) (1) (2) 1.4 –6 1.2 –4 1.0 –2 (2) 0 0 0.8 (1) –1 –2 VGS (V) –3 0.6 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa277 103 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa278 –5 VGS (V) (1) –4 C (pF) –3 (2) 102 –2 (3) –1 10 –10–1 –1 –10 VDS (V) –102 f = 1 MHz; VGS = 0 V 0 0 1 2 3 4 QG (nC) 5 ID = -3 A; VDS = -10 V; Tamb = 25 °C (1) Ciss (2) Coss (3) Crss Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMG85XP Product data sheet Fig 13. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 8 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa134 −1.6 VDS VGS(th) (V) ID (1) −1.2 VGS(pl) (2) VGS(th) −0.8 VGS (3) QGS1 −0.4 QGS2 QGS QGD QG(tot) 017aaa137 0.0 −60 0 60 120 180 Tj (°C) ID = -0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values Fig 14. Gate-source threshold voltage as a function of junction temperature Fig 15. Gate charge waveform definitions 017aaa279 –3 IS (A) –2 (1) (2) –1 0 0.0 –0.2 –0.4 –0.6 –0.8 –1.0 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 9 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 10 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 18. Package outline SOT363 (TSSOP6) PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 11 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint for SOT363 (TSSOP6) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint for SOT363 (TSSOP6) PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 12 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMG85XP v.N 20110628 Product data sheet - - PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 13 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 12. 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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMG85XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 15 of 16 PMG85XP NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 June 2011 Document identifier: PMG85XP