020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V - - -3.7 A - 82 103 mΩ Per transistor drain current ID VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics (per transistor) RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -1.3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 Transparent top view 8 D2 drain TR2 DFN2020-6 (SOT1118) 6 5 7 1 Graphic symbol 8 2 D2 D1 4 G1 G2 3 S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number Package PMDPB85UPE Name Description Version DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1118 4. Marking Table 4. Marking codes Type number Marking code PMDPB85UPE 2C 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage ID drain current Per transistor -8 8 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.7 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.9 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A - -11.6 A [2] - 515 mW [1] - 1170 mW - 8330 mW - -1.2 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Source-drain diode IS source current PMDPB85UPE Product data sheet Tamb = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 [1] © NXP B.V. 2012. All rights reserved. 2 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 2000 V ESD maximum rating electrostatic discharge voltage VESD [3] HBM; C = 100 pF; R = 1.5 kΩ Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMDPB85UPE Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003928 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 100 μs tp = 1 ms -1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -102 -10 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 211 243 K/W [2] - 93 107 K/W [2] - 55 64 K/W - 12 15 K/W Per transistor Rth(j-a) Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB85UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003929 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 10 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-003930 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDPB85UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -1.3 A; Tj = 25 °C - 82 103 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = -4.5 V; ID = -1.3 A; Tj = 150 °C - 114 144 mΩ VGS = -2.5 V; ID = -1.1 A; Tj = 25 °C - 107 146 mΩ VGS = -1.8 V; ID = -0.8 A; Tj = 25 °C - 142 210 mΩ VDS = -10 V; ID = -1.3 A; Tj = 25 °C - 6 - S - 5.4 8.1 nC - 0.7 - nC - 1 - nC - 514 - pF - 78 - pF - 59 - pF - 6 - ns - 12 - ns Dynamic characteristics (per transistor) QG(tot) total gate charge VDS = -10 V; ID = -1.3 A; VGS = -4.5 V; Tj = 25 °C QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 47 - ns tf fall time - 21 - ns - -0.7 -1.2 V VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; ID = -1.3 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode (per transistor) VSD source-drain voltage PMDPB85UPE Product data sheet IS = -0.3 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003931 -12 -8.0 V -4.5 V ID (A) 017aaa143 –10–3 VGS = -2.5 V -3.0 V ID (A) -2.2 V –10–4 -8 -2.0 V (1) (2) (3) -1.8 V -4 –10–5 -1.6 V 0 0 -1 -2 -3 -4 –10–6 –0.2 –0.4 –0.6 –0.8 VDS (V) –1.0 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values aaa-003932 400 VGS = -1.6 V RDSon (mΩ) -2.0 V -1.8 V Fig 7. Sub-threshold drain current as a function of gate-source voltage aaa-003933 400 -2.5 V RDSon (mΩ) -2.2 V 300 300 200 200 Tj = 150 °C -3.0 V 100 100 -4.5 V -8.0 V Tj = 25 °C 0 0 0 -4 -8 -12 0 ID (A) Product data sheet -6 ID = -1.3 A Drain-source on-state resistance as a function of drain current; typical values PMDPB85UPE -4 VGS (V) Tj = 25 °C Fig 8. -2 Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003934 -12 aaa-003935 1.50 a ID (A) 1.25 -8 Tj = 25 °C Tj = 150 °C 1.00 -4 0.75 0 0 -1 -2 -3 0.50 -60 0 60 120 VGS (V) 180 Tj (°C) VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-003936 -1.2 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-003937 103 Ciss C (pF) max -0.8 typ 102 Coss Crss min -0.4 0.0 -60 0 60 120 180 10 -10-1 -1 Tj (°C) VDS (V) ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig 12. Gate-source threshold voltage as a function of junction temperature PMDPB85UPE Product data sheet -102 -10 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003938 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 2 4 6 QG (nC) ID = -1.3 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions aaa-003939 -5 IS (A) -4 -3 -2 Tj = 150 °C Tj = 25 °C -1 0 0.0 -0.4 -0.8 -1.2 VSD (V) VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values PMDPB85UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig 18. Package outline DFN2020-6 (SOT1118) PMDPB85UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) sot1118_fr Fig 19. Reflow soldering footprint for DFN2020-6 (SOT1118) PMDPB85UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMDPB85UPE v.1 20120620 Product data sheet - - PMDPB85UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PMDPB85UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 15 PMDPB85UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 June 2012 Document identifier: PMDPB85UPE