SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1.5 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V - - 320 mA - 1 1.6 Ω drain current ID VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 320 mA; Tj = 25 °C Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT323 (SC-70) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138BKW SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] BSS138BKW AD% [1] % = placeholder for manufacturing site code. BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage drain current ID total power dissipation Ptot 20 V VGS = 10 V; Tamb = 25 °C - 320 mA VGS = 10 V; Tamb = 100 °C [1] - 210 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -20 [1] Tamb = 25 °C - 1.2 A [2] - 260 mW [1] - 310 mW - 830 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - 320 mA HBM [3] - 1500 V ESD maximum rating electrostatic discharge voltage VESD [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature BSS138BKW Product data sheet 0 -75 175 Fig 2. -25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000173 10 ID (A) 1 (1) 10-1 (2) (3) (4) 10-2 (5) 10-3 10-1 1 10 102 VDS (V) IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) tp = 100 ms (4) DC; Tsp = 25 °C (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 415 480 K/W [2] - 350 400 K/W - - 150 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 017aaa028 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0 10 0.2 0.05 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa029 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.48 1.1 1.6 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = 10 V; ID = 320 mA; Tj = 25 °C - 1 1.6 Ω VGS = 10 V; ID = 320 mA; Tj = 150 °C - 2 3.2 Ω VGS = 4.5 V; ID = 200 mA; Tj = 25 °C - 1.1 2.2 Ω VGS = 2.5 V; ID = 10 mA; Tj = 25 °C - 1.4 6.5 Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 700 - mS VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C - 0.6 0.7 nC - 0.1 - nC - 0.2 - nC - 42 56 pF - 7 - pF - 4 - pF - 5 10 ns RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 40 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 5 - ns td(off) turn-off delay time - 38 76 ns tf fall time - 20 - ns 0.47 0.8 1.2 V Source-drain diode VSD source-drain voltage BSS138BKW Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000158 0.4 10 V ID (A) 2V 2.5 V aaa-000159 10-3 ID (A) 0.3 10-4 1.75 V 0.2 (1) (2) 0.5 1.0 (3) 10-5 0.1 1.5 V 0 VGS = 1.25 V 0 1 2 3 VDS (V) 4 10-6 0 Tj = 25 °C 1.5 VGS (V) 2.0 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. aaa-000160 6 RDS(on) (Ω) Sub-threshold drain current as a function of gate-source voltage aaa-000161 6 RDS(on) (Ω) (1) 4 4 (2) (3) 2 (1) 2 (4) (5) (2) (6) 0 0 0.1 0.2 0.3 ID (A) 0 0.4 0 2 Tj = 25 °C ID = 300 mA (1) VGS = 1.5 V (1) Tj = 150 °C (2) VGS = 1.75 V (2) Tj = 25 °C 4 6 8 10 VGS (V) (3) VGS = 2.0 V (4) VGS = 2.25 V (5) VGS = 4.5 V (6) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values BSS138BKW Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 7 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000162 0.6 (1) ID (A) aaa-000163 2 a (2) 1.5 0.4 1 0.2 0.5 (2) 0 0 (1) 1.0 2.0 VGS (V) 0 -60 3.0 0 60 120 Tj = (°C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-000164 2 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-000165 102 VGS(th) (V) (1) C (pF) 1.5 (2) (1) 1 10 (3) (2) 0.5 0 -60 (3) 0 60 120 Tj (°C) 180 1 10-1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature BSS138BKW Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 8 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000166 10 VGS (V) VDS 8 ID 6 VGS(pl) 4 VGS(th) VGS 2 QGS1 QGS2 QGS 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 QG (nC) QGD QG(tot) 003aaa508 ID = 0.3 A; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions aaa-000167 0.4 IS (A) 0.3 (1) (2) 0.2 0.1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 9 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 10 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT323 (SC-70) BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 11 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 10. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig 19. Reflow soldering footprint for SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 20. Wave soldering footprint for SOT323 (SC-70) BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 12 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS138BKW v.1 20110812 Product data sheet - - BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 13 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 12. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Quality information . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 August 2011 Document identifier: BSS138BKW