INTEGRATED CIRCUITS DATA SHEET ADDENDUM SL2 ICS10 I•CODE EPC Smart Label IC Bumped Wafer Specification Product Specification Revision 3.0 2004 January 30 080830 Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification SL2 ICS10 CONTENTS 1 SCOPE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 REFERENCE DOCUMENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Philips Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 MECHANICAL SPECIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3.1 3.2 3.3 3.4 3.5 Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wafer Backside . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Chip Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Passivation on Front . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Au Bump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 3 3 3 4 FAIL DIE IDENTIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 Wafer Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 5 ORDERING INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 CHIP ORIENTATION AND BONDPAD LOCATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 ELECTRICAL SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.1 7.2 7.3 Absolute Maximum Ratings(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 FINAL WAFERTEST SPECIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 DATA SHEET STATUS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 DEFINITIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 DISCLAIMERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification 1 SL2 ICS10 SCOPE 3.5 • Bump material: This specification describes electrical, physical and dimensional properties of Au-bumped, sawn wafers on FFC of I•CODE EPC Smart Label IC. 2 2.1 Au Bump REFERENCE DOCUMENTS 35 – 80 HV 0.005 • Bump shear strength: > 70 MPa • Bump height: 18 µm • Bump height uniformity: Philips Documents – within a die: – within a wafer: – wafer to wafer: • Data Sheet ‘General Specification for 8” Wafer’ • Data Sheet ‘General Quality Specification’ • Bump flatness: • Data Sheet ‘I•CODE EPC Smart Label IC, Functional Specification’ – LA, LB • Application Note ‘Coil Design Guide’ – TestIO/Vss(1) • Bump size variation: 3.1 MECHANICAL SPECIFICATION 200 mm (8") • Thickness: 150 µm ± 15 µm 60 x 60 µm ± 5 µm • Under bump metallisation: sputtered TiW Si • Treatment: ground and stress release • Roughness: Ra max. 0.5 µm, Rt max. 5 µm Chip Dimensions • Chip size: x = 760 µm, y = 560 µm • Scribe line: x-line: 60 µm y-line: 80 µm 3.4 90 x 90 µm Wafer Backside • Material: 3.3 ± 1.5 µm Wafer • Diameter: 3.2 ± 2 µm ± 3 µm ± 4 µm • Bump size: • Data Sheet ‘Specification of the IBIS Wafermap’ 3 > 99.9% pure Au • Bump hardness: Passivation on Front • Type: Sandwich structure • Material: PSG / Nitride (on top) • Thickness: 500 nm / 600 nm (1) 3 TestIO and Vss are floating after sawing. Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification 4 SL2 ICS10 FAIL DIE IDENTIFICATION Every die is electrically tested according to data sheet. Identification of chips with electrical parameters not conform with the data sheet is done by inking and wafer mapping (all dies at wafer periphery are identified as ‘FAIL’). The ink information refers to unsawn wafers. At sawn wafers (on FFC) additional ICs are marked as ‘FAIL’ in the wafer map if damaged during the sawing process. These ICs will not be inked. 4.1 Wafer Mapping Wafer mapping for failed die information is available on Floppy-Disk. Format: IBIS format 5 ORDERING INFORMATION TYPE NAME SL2 ICS10 01DW/V4 DESCRIPTION ORDERING CODE Bumped die on sawn wafer 9352 751 61005 4 Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification CHIP ORIENTATION AND BONDPAD LOCATIONS (9) (9) (1) TestIO PAD (center) x [µm] y [µm] LA 590.0 0.0 LB 0.0 0.0 TestIO -26.0 381.0 Vss 618.0 381.0 Vss (8) (4) (8) y LB LA (5) (7) x (6) (7) 6 SL2 ICS10 (2) (3) (1) (2) (3) (4) (5) x-Scribeline width: y-Scribeline width: Chip step, x-length: Chip step, y-length: LA bump edge to chip edge, x-length: 60 µm 80 µm 840 µm 620 µm 41 µm (6) LB bump edge to chip edge, x-length: (7) LA, LB bump edge to chip edge, y-length: (8) TestIO, Vss bump edge to chip edge, x-length: (9) TestIO, Vss bump edge to chip edge, y-length:: Fig.1 Bondpad plan SL2 ICS10. 5 39 µm 71 µm 28 µm 33 µm Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification 7 SL2 ICS10 ELECTRICAL SPECIFICATIONS 7.1 Absolute Maximum Ratings(1)(2) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT °C Tstg Storage Temperature Range −55 + 140 Tj Junction Temperature −55 + 140 °C VESD ESD Voltage Immunity ±2 kVpeak Imax LA-LB Maximum Input Peak Current ± 60 mApeak JEDEC, JESD 22 – A114-B, Human Body Model Notes 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical Characteristics section of this specification is not implied. 2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima. 7.2 Operating Conditions SYMBOL PARAMETER TEST CONDITIONS TYP(1) MIN MAX −25 UNIT +85 °C 30 mArms Tjop Operating Junction Temperature ILA-LB Input Current(2) VLA-LB rd Minimum Supply Voltage for READ 2.6 2.9 Vrms VLA-LB wr Minimum Supply Voltage for WRITE 2.6 2.9 Vrms fop Operating Frequency(3) 13.560 13.567 MHz 13.553 Notes 1. Typical ratings are not guaranteed. These values listed are at room temperature. 2. The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter ILA-LB). 3. Bandwidth limitation (± 7 kHz) according to ISM band regulations. 7.3 Electrical Characteristics Top = −25 to +85 °C SYMBOL PARAMETER LB(2) TEST CONDITIONS MIN TYP(1) MAX VLA-LB = 2 Vrms 22.3 23.5 24.7 UNIT Cres Input Capacitance between LA – Pmin rd Minimum Operating Supply Power for READ(3) 400 µW Pmin wr Minimum Operating Supply Power for WRITE(3) 400 µW tret Data Retention Tamb ≤ 55 °C Notes 1. Typical ratings are not guaranteed. These values listed are at room temperature. 2. Measured with an HP4285A LCR meter at 13.56 MHz. 3. Including losses in resonant capacitor and rectifier. 6 5 pF Years Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification 8 SL2 ICS10 FINAL WAFERTEST SPECIFICATION • Minimum yield per wafer: 30 % of 56276 potential good dies. 7 Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification 9 SL2 ICS10 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10 DEFINITIONS Short-form specification ⎯ The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition ⎯ Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information ⎯ Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 11 DISCLAIMERS Life support applications ⎯ These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors’ customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes ⎯ Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 8 Philips Semiconductors Product Specification Revision 3.0 2004 January 30 Bumped Wafer Specification SL2 ICS10 12 REVISION HISTORY Table 1 Bumped Wafer Specification SL2 ICS10 Revision History REVISION DATE CPCN 3.0 Jan 2004 - PAGE DESCRIPTION Contents updated. Status now -> Product Specification 4 Chapter 5 “ORDERING INFORMATION”: - added Ordering Code 1.1 Oct 2003 - Contents updated. 3 Chapter 3 “MECHANICAL SPECIFICATION”: - rewording 5 Chapter 6 “CHIP ORIENTATION AND BONDPAD LOCATIONS”: - changed chip orientation and bondpad locations 6 Chapter 7 “ELECTRICAL SPECIFICATIONS”: - rewording 1.0 Feb. 2003 - Initial version. 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. © Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.