RENESAS 2SJ181L-E

Preliminary Datasheet
2SJ181(L), 2SJ181(S)
R07DS0395EJ0300
(Previous: REJ03G0848-0200)
Rev.3.00
May 16, 2011
Silicon P Channel MOS FET
Description
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK (L)-(1) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
4
D
1
1
2
2
3
1. Gate
2. Drain
3. Source
4. Drain
G
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Value
–600
±15
–0.5
–1.0
–0.5
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
R07DS0395EJ0300 Rev.3.00
May 16, 2011
Page 1 of 6
2SJ181(L), 2SJ181(S)
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–600
±15
—
—
–2.0
—
0.3
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
15
0.45
220
55
13
7
20
35
35
–0.85
230
Max
—
—
±10
–100
–4.0
25
—
—
—
—
—
—
—
—
—
—
Unit
V
V
μA
μA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = –500 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –0.3 A, VGS = –10 V Note 3
ID = –0.3 A, VDS = –20 V Note 3
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –0.3 A
VGS = –10 V
RL = 100 Ω
IF = –0.5 A, VGS = 0
IF = –0.5 A, VGS = 0
diF/dt = 50 A/μs
3. Pulse test
R07DS0395EJ0300 Rev.3.00
May 16, 2011
Page 2 of 6
2SJ181(L), 2SJ181(S)
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–10
ID (A)
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
0
0
50
100
150
Case Temperature
–3
10 μs
–1
10
PW
1m
–0.1
–0.03
Tc (°C)
s
=1
s
DC
0m
Op
s(
era
1s
tio
Operation in
h
n(
Tc ot)
this area is
=2
5°C
limited by RDS (on)
)
–0.3
Ta = 25°C
–0.01
–10 –20
–50 –100 –200
200
0μ
Drain to Source Voltage
Typical Output Characteristics
–500 –1000
VDS (V)
Typical Transfer Characteristics
–0.5
–1.0
–6 V
–10 V
–0.8
ID (A)
ID (A)
Pulse Test
–0.3
–0.6
–5 V
Drain Current
Drain Current
–0.4
–0.4
–4.5 V
–0.2
Tc = –25°C
–0.2
75°C
25°C
–0.1
VDS = –20 V
Pulse Test
VGS = –4 V
0
0
–10
–20
–30
0
–50
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
Pulse Test
–16
–12
ID = –0.5 A
–8
–0.2 A
–4
–0.1 A
0
0
–4
–8
–12
Gate to Source Voltage
R07DS0395EJ0300 Rev.3.00
May 16, 2011
–16
–20
VGS (V)
0
–2
–4
–6
–8
Gate to Source Voltage
VDS (V)
–10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage
–40
500
Pulse Test
200
100
50
VGS = –10 V
20
10
–15 V
5
–0.02 –0.05 –0.1 –0.2
Drain Current
–0.5
–1
–2
ID (A)
Page 3 of 6
2SJ181(L), 2SJ181(S)
Preliminary
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
VGS = –10 V
32
ID = –0.5 A
24
–0.2 A
–0.1 A
16
8
0
–40
0
40
80
Case Temperature
120
160
2
0.5
0.05
VDS = –20 V
Pulse Test
0.02
–0.05 –0.1 –0.2
Tc (°C)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
300
200
100
50
Reverse Drain Current
Coss
30
10
Crss
–5
–8
–12
VGS
–16
–800
ID = –0.5 A
–1000
0
4
8
Gate Charge
R07DS0395EJ0300 Rev.3.00
May 16, 2011
12
16
Qg (nc)
–40
–50
–20
20
VGS (V)
500
VGS = –10 V, VDD = –30 V
PW = 5 μs, duty ≤ 1 %
Switching Time t (ns)
VDD = –100 V
–250 V
–400 V
VDS
–600
–4
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
–400
–30
Switching Characteristics
0
–200
–20
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDD = –100 V
–250 V
–400 V
–5
100
IDR (A)
–0
–2
Ciss
3 V =0
GS
f = 1 MHz
1
0
–10
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
–2
–1
Typical Capacitance vs.
Drain to Source Voltage
500
–1
–0.5
Drain Current ID (A)
1000
–0.5
75°C
0.1
1000
10
–0.05 –0.1 –0.2
25°C
0.2
Body-Drain Diode Reverse
Recovery Time
20
Tc = –25°C
1
200
100
50
20
10
tf
td(off)
tr
td(on)
5
–0.05 –0.1 –0.2
–0.5
Drain Current
–1
–2
–5
ID (A)
Page 4 of 6
2SJ181(L), 2SJ181(S)
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–1.0
Pulse Test
–0.8
–0.6
–0.4
VGS = –10 V
–0.2
0, 5 V
0
0
–0.2
–0.4
–0.6
–0.8
Source to Drain Voltage
VSD
–1.0
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
0.05
0.02
0.03
1
0.0
1
o
sh
D=
PDM
tp
uls
0.01
10 μ
PW
T
e
PW
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
R07DS0395EJ0300 Rev.3.00
May 16, 2011
10%
tr
10%
td(off)
tf
Page 5 of 6
2SJ181(L), 2SJ181(S)
Preliminary
Package Dimensions
• 2SJ181(L)
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZD-A
Previous Code
DPAK(L)-(1) / DPAK(L)-(1)V
1.7 ± 0.5
Package Name
DPAK(L)-(1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
MASS[Typ.]
0.42g
2.29 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
16.2 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
• 2SJ181(S)
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
2SJ181L-E
2SJ181STR-E
R07DS0395EJ0300 Rev.3.00
May 16, 2011
Quantity
2160 pcs
3000 pcs
Shipping Container
Box (Tube)
Taping
Page 6 of 6
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Colophon 1.1